-
1
-
-
21544455021
-
Reversible conductivity changes in discharge produced amorphous Si
-
D. L. Staebler, and C. R. Wronski, "Reversible conductivity changes in discharge produced amorphous Si," Appl. Phys. Lett. 31(4), 292-294 (1977).
-
(1977)
Appl. Phys. Lett.
, vol.31
, Issue.4
, pp. 292-294
-
-
Staebler, D.L.1
Wronski, C.R.2
-
2
-
-
20544478383
-
Thickness dependence of properties of excimer laser crystallized nanopolycrystalline silicon
-
A. A. D. T. Adikaari, and S. R. P. Silva, "Thickness dependence of properties of excimer laser crystallized nanopolycrystalline silicon," J. Appl. Phys. 97(11), 114305 (2005).
-
(2005)
J. Appl. Phys.
, vol.97
, Issue.11
, pp. 114305
-
-
Adikaari, A.A.D.T.1
Silva, S.R.P.2
-
3
-
-
30444449679
-
Laser crystallization - A way to produce crystalline silicon films on glass or on polymer substrates
-
F. Falk, and G. Andra, "Laser crystallization - a way to produce crystalline silicon films on glass or on polymer substrates," J. Cryst. Growth 287(2), 397-401 (2006).
-
(2006)
J. Cryst. Growth
, vol.287
, Issue.2
, pp. 397-401
-
-
Falk, F.1
Andra, G.2
-
4
-
-
33747387178
-
oc above 500 mV
-
DOI 10.1016/j.tsf.2005.12.069, PII S0040609005024119
-
L. Carnel, I. Gordon, D. Van Gestel, K. Van Nieuwenhuysen, G. Agostinelli, G. Beaucarne, and J. Poortmans, "Thin-film polycrystalline silicon solar cells on ceramic substrates with a V-oc above 500 mV," Thin Solid Films 511-512, 21-25 (2006). (Pubitemid 44250834)
-
(2006)
Thin Solid Films
, vol.511-512
, pp. 21-25
-
-
Carnel, L.1
Gordon, I.2
Van Gestel, D.3
Van Nieuwenhuysen, K.4
Agostinelli, G.5
Beaucarne, G.6
Poortmans, J.7
-
5
-
-
33746977215
-
Solid phase crystallized polycrystalline thin-films on glass from evaporated silicon for photovoltaic applications
-
D. Song, D. Inns, A. Straub, M. L. Terry, P. Campbell, and A. G. Aberle, "Solid phase crystallized polycrystalline thin-films on glass from evaporated silicon for photovoltaic applications," Thin Solid Films 513(1-2), 356-363 (2006).
-
(2006)
Thin Solid Films
, vol.513
, Issue.1-2
, pp. 356-363
-
-
Song, D.1
Inns, D.2
Straub, A.3
Terry, M.L.4
Campbell, P.5
Aberle, A.G.6
-
6
-
-
0346972518
-
Ultrafast laser-induced crystallization of amorphous silicon films
-
T. Y. Choi, D. J. Hwang, and C. P. Grigoropoulos, "Ultrafast laser-induced crystallization of amorphous silicon films," Opt. Eng. 42(11), 3383-3388 (2003).
-
(2003)
Opt. Eng.
, vol.42
, Issue.11
, pp. 3383-3388
-
-
Choi, T.Y.1
Hwang, D.J.2
Grigoropoulos, C.P.3
-
7
-
-
4444237407
-
Near-infrared femtosecond laserinduced crystallization of amorphous silicon
-
J. M. Shieh, Z. H. Chen, B. T. Dai, Y. C. Wang, A. Zaitsev, and C. L. Pan, "Near-infrared femtosecond laserinduced crystallization of amorphous silicon," Appl. Phys. Lett. 85(7), 1232-1234 (2004).
-
(2004)
Appl. Phys. Lett.
, vol.85
, Issue.7
, pp. 1232-1234
-
-
Shieh, J.M.1
Chen, Z.H.2
Dai, B.T.3
Wang, Y.C.4
Zaitsev, A.5
Pan, C.L.6
-
8
-
-
34748865419
-
Femtosecond-laser-induced-crystallization and simultaneous formation of light traping microstructures in thin a-Si:H films
-
B. K. Nayak, and M. C. Gupta, "Femtosecond-laser-induced- crystallization and simultaneous formation of light traping microstructures in thin a-Si:H films," Appl. Phys., A Mater. Sci. Process. 89(3), 663-666 (2007).
-
(2007)
Appl. Phys., A Mater. Sci. Process.
, vol.89
, Issue.3
, pp. 663-666
-
-
Nayak, B.K.1
Gupta, M.C.2
-
9
-
-
0036979673
-
Inducing and probing non-thermal transitions in semiconductors using femtosecond laser pulses
-
S. K. Sundaram, and E. Mazur, "Inducing and probing non-thermal transitions in semiconductors using femtosecond laser pulses," Nat. Mater. 1(4), 217-224 (2002).
-
(2002)
Nat. Mater.
, vol.1
, Issue.4
, pp. 217-224
-
-
Sundaram, S.K.1
Mazur, E.2
-
10
-
-
0035282606
-
Non-thermal melting in semiconductors measured at femtosecond resolution
-
A. Rousse, C. Rischel, S. Fourmaux, I. Uschmann, S. Sebban, G. Grillon, Ph. Balcou, E. Förster, J. P. Geindre, P. Audebert, J. C. Gauthier, and D. Hulin, "Non-thermal melting in semiconductors measured at femtosecond resolution," Nature 410(6824), 65-68 (2001).
-
(2001)
Nature
, vol.410
, Issue.6824
, pp. 65-68
-
-
Rousse, A.1
Rischel, C.2
Fourmaux, S.3
Uschmann, I.4
Sebban, S.5
Grillon, G.6
Balcou, Ph.7
Förster, E.8
Geindre, J.P.9
Audebert, P.10
Gauthier, J.C.11
Hulin, D.12
-
11
-
-
35949007515
-
Ultrafast laser-induced order-disorder transitions in semiconductors
-
K. Sokolowski-Tinten, J. Bialkowski, and D. von der Linde, "Ultrafast laser-induced order-disorder transitions in semiconductors, " Phys. Rev. B Condens. Matter 51(20), 14186-14198 (1995).
-
(1995)
Phys. Rev. B Condens. Matter
, vol.51
, Issue.20
, pp. 14186-14198
-
-
Sokolowski-Tinten, K.1
Bialkowski, J.2
Linde Der D.Von3
-
12
-
-
0031258062
-
Laser ablation and micromachining with ultrashort laser pulses
-
PII S0018919797070875
-
X. Liu, D. Du, and G. Mourou, "Laser ablation and micromachining with ultrashort laser pulses," IEEE J. Quantum Electron. 33(10), 1706-1716 (1997). (Pubitemid 127557159)
-
(1997)
IEEE Journal of Quantum Electronics
, vol.33
, Issue.10
, pp. 1706-1716
-
-
Liu, X.1
Du, D.2
Mourou, G.3
-
13
-
-
0000050015
-
Microstructuring of silicon with femtosecond laser pulses
-
T. H. Her, R. J. Finlay, C. Wu, S. Deliwala, and E. Mazur, "Microstructuring of silicon with femtosecond laser pulses," Appl. Phys. Lett. 73(12), 1673-1675 (1998).
-
(1998)
Appl. Phys. Lett.
, vol.73
, Issue.12
, pp. 1673-1675
-
-
Her, T.H.1
Finlay, R.J.2
Wu, C.3
Deliwala, S.4
Mazur, E.5
-
14
-
-
0034171657
-
Femtosecond laser-induced formation of spikes on silicon
-
T. H. Her, R. J. Finlay, C. Wu, and E. Mazur, "Femtosecond laser-induced formation of spikes on silicon," Appl. Phys., A Mater. Sci. Process. 70(4), 383-385 (2000).
-
(2000)
Appl. Phys., A Mater. Sci. Process.
, vol.70
, Issue.4
, pp. 383-385
-
-
Her, T.H.1
Finlay, R.J.2
Wu, C.3
Mazur, E.4
-
15
-
-
0029325460
-
The black silicon method: A universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control
-
H. Jansen, M. de Boer, R. Legtenberg, and M. Elwenspoek, "The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control," J. Micromech. Microeng. 5(2), 115-120 (1995).
-
(1995)
J. Micromech. Microeng.
, vol.5
, Issue.2
, pp. 115-120
-
-
Jansen, H.1
De Boer, M.2
Legtenberg, R.3
Elwenspoek, M.4
-
16
-
-
33748307457
-
Black silicon layer formation for application in solar cells
-
J. S. Yoo, I. O. Parm, U. Gangopadhyay, K. Kim, S. K. Dhungel, D. Mangalaraj, and J. Yi, "Black silicon layer formation for application in solar cells," Sol. Energy Mater. Sol. Cells 90(18-19), 3085-3093 (2006).
-
(2006)
Sol. Energy Mater. Sol. Cells
, vol.90
, Issue.18-19
, pp. 3085-3093
-
-
Yoo, J.S.1
Parm, I.O.2
Gangopadhyay, U.3
Kim, K.4
Dhungel, S.K.5
Mangalaraj, D.6
Yi, J.7
-
17
-
-
33745047870
-
Phonon confinement in nanostructured materials
-
A. K. Arora, M. Rajalakshmi, and T. R. Ravindran, "Phonon Confinement in Nanostructured Materials," Encyclopedia of Nanoscience and Nanotechnology 8, 499-512, (2004).
-
(2004)
Encyclopedia of Nanoscience and Nanotechnology
, vol.8
, pp. 499-512
-
-
Arora, A.K.1
Rajalakshmi, M.2
Ravindran, T.R.3
-
18
-
-
0141745719
-
Determining the material structure of microcrystalline silicon from Raman spectra
-
C. Smit, R. A. C. M. M. Van Swaaij, H. Donker, A. M. H. N. Petit, W. M. M. Kesels, and M. C. M. van de Sanden, "Determining the material structure of microcrystalline silicon from Raman spectra," J. Appl. Phys. 94(5), 3582-3588 (2003).
-
(2003)
J. Appl. Phys.
, vol.94
, Issue.5
, pp. 3582-3588
-
-
Smit, C.1
Van Swaaij, R.A.C.M.M.2
Donker, H.3
Petit, A.M.H.N.4
Kesels, W.M.M.5
Van De Sanden, M.M.C.6
-
19
-
-
0027905469
-
Pulsed-laser crystallization and doping for the fabrication of high-quality poly-Si TFTs
-
E. Fogarassy, H. Pattyn, M. Elliq, A. Slaoui, B. Prevot, R. Stuck, S. deUnamuno, and E. L. Mathe, "Pulsed-laser crystallization and doping for the fabrication of high-quality poly-Si TFTs," Appl. Surf. Sci. 69(1-4), 231-241 (1993).
-
(1993)
Appl. Surf. Sci.
, vol.69
, Issue.1-4
, pp. 231-241
-
-
Fogarassy, E.1
Pattyn, H.2
Elliq, M.3
Slaoui, A.4
Prevot, B.5
Stuck, R.6
De Unamuno, S.7
Mathe, E.L.8
-
20
-
-
0000332717
-
Raman spectroscopy of amorphous and microcrystalline silicon films deposited by low-pressure chemical vapor deposition
-
A. T. Voutsas, M. K. Hatalis, J. Boyce, and A. Chiang, "Raman spectroscopy of amorphous and microcrystalline silicon films deposited by low-pressure chemical vapor deposition," J. Appl. Phys. 78(12), 6999-7006 (1995).
-
(1995)
J. Appl. Phys.
, vol.78
, Issue.12
, pp. 6999-7006
-
-
Voutsas, A.T.1
Hatalis, M.K.2
Boyce, J.3
Chiang, A.4
-
21
-
-
0000172317
-
Critical volume fraction of crystallinity for conductivity percolation in phosphorus-doped Si-F-H alloys
-
R. Tsu, J. Gonzalez-Hernandez, S. S. Chao, S. C. Lee, and K. Tanaka, "Critical volume fraction of crystallinity for conductivity percolation in phosphorus-doped Si-F-H alloys," Appl. Phys. Lett. 40(6), 534-535 (1982).
-
(1982)
Appl. Phys. Lett.
, vol.40
, Issue.6
, pp. 534-535
-
-
Tsu, R.1
Gonzalez-Hernandez, J.2
Chao, S.S.3
Lee, S.C.4
Tanaka, K.5
-
22
-
-
36549104969
-
Experimental-determination of the nanocrystalline volume fraction in silicon thin films from Raman-spectroscopy
-
E. Bustarret, M. A. Hachicha, and M. Brunel, "Experimental- determination of the nanocrystalline volume fraction in silicon thin films from Raman-spectroscopy," Appl. Phys. Lett. 52(20), 1675-1677 (1988).
-
(1988)
Appl. Phys. Lett.
, vol.52
, Issue.20
, pp. 1675-1677
-
-
Bustarret, E.1
Hachicha, M.A.2
Brunel, M.3
-
23
-
-
36849015423
-
Improved broadband and quasi-omnidirectional antireflection properties with biomimetic silicon nanostructures
-
Y. F. Huang, S. Chattopadhyay, Y. J. Jen, C. Y. Peng, T. A. Liu, Y. K. Hsu, C. L. Pan, H. C. Lo, C. H. Hsu, Y. H. Chang, C. S. Lee, K. H. Chen, and L. C. Chen, "Improved broadband and quasi-omnidirectional antireflection properties with biomimetic silicon nanostructures," Nat. Nanotechnol. 2(12), 770-774 (2007).
-
(2007)
Nat. Nanotechnol.
, vol.2
, Issue.12
, pp. 770-774
-
-
Huang, Y.F.1
Chattopadhyay, S.2
Jen, Y.J.3
Peng, C.Y.4
Liu, T.A.5
Hsu, Y.K.6
Pan, C.L.7
Lo, H.C.8
Hsu, C.H.9
Chang, Y.H.10
Lee, C.S.11
Chen, K.H.12
Chen, L.C.13
-
24
-
-
0000977072
-
Time-resolved reflectivity measurements of femtosecond-optical- pulse-induced phase transitions in silicon
-
C. V. Shank, R. Yen, and C. Hirlimann, "Time-Resolved Reflectivity Measurements of Femtosecond-Optical- Pulse-Induced Phase Transitions in Silicon," Phys. Rev. Lett. 50(6), 454-457 (1983).
-
(1983)
Phys. Rev. Lett.
, vol.50
, Issue.6
, pp. 454-457
-
-
Shank, C.V.1
Yen, R.2
Hirlimann, C.3
-
25
-
-
84975649433
-
Femtosecond imaging of melting and evaporation at a photoexcited silicon surface
-
M. C. Downer, R. L. Fork, and C. V. Shank, "Femtosecond imaging of melting and evaporation at a photoexcited silicon surface," J. Opt. Soc. Am. B 2(4), 595-599 (1985).
-
(1985)
J. Opt. Soc. Am. B
, vol.2
, Issue.4
, pp. 595-599
-
-
Downer, M.C.1
Fork, R.L.2
Shank, C.V.3
-
26
-
-
0001418899
-
Dynamics of ultrafast phase changes in amorphous GeSb films
-
K. Sokolowski-Tinten, J. Solis, J. Bialkowski, J. Siegel, C. N. Afonso, and D. Von der Linde, "Dynamics of Ultrafast Phase Changes in Amorphous GeSb Films," Phys. Rev. Lett. 81(17), 3679-3682 (1998).
-
(1998)
Phys. Rev. Lett.
, vol.81
, Issue.17
, pp. 3679-3682
-
-
Sokolowski-Tinten, K.1
Solis, J.2
Bialkowski, J.3
Siegel, J.4
Afonso, C.N.5
Von Der Linde, D.6
-
27
-
-
0030126219
-
Existence of electronic excitation enhanced crystallization in GeSb amorphous thin films upon ultrashort laser pulse irradiation
-
J. Solis, C. N. Afonso, S. C. W. Hyde, N. P. Barry, and P. M. W. French, "Existence of electronic excitation enhanced crystallization in GeSb amorphous thin films upon ultrashort laser pulse irradiation," Phys. Rev. Lett. 76(14), 2519-2522 (1996).
-
(1996)
Phys. Rev. Lett.
, vol.76
, Issue.14
, pp. 2519-2522
-
-
Solis, J.1
Afonso, C.N.2
Hyde, S.C.W.3
Barry, N.P.4
French, P.M.W.5
|