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Volumn 101, Issue 20, 2012, Pages

Graphene-GaAs/Alx Ga1-x As heterostructure dual-function field-effect transistor

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; BANDBENDING; CHANNEL MATERIALS; GAAS; GAAS SUBSTRATES; GATE ELECTRODES; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HYBRID FIELDS; OPERATION SCHEMES; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

EID: 84870051903     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4767387     Document Type: Article
Times cited : (21)

References (15)
  • 6
    • 77955231284 scopus 로고    scopus 로고
    • 10.1038/nnano.2010.89
    • F. Schwierz, Nat. Nanotechnol. 5, 487 (2010). 10.1038/nnano.2010.89
    • (2010) Nat. Nanotechnol. , vol.5 , pp. 487
    • Schwierz, F.1
  • 14
    • 84871021438 scopus 로고    scopus 로고
    • See supplementary material at E-APPLAB-101-056247 for the simulation details of heterostructure band diagram
    • See supplementary material at http://dx.doi.org/10.1063/1.4767387 E-APPLAB-101-056247 for the simulation details of heterostructure band diagram.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.