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Volumn 263, Issue , 2012, Pages 497-501

The combination self-cleaning effect of trimethylaluminium and tetrakis (dimethyl-amino) hafnium pretreatments on GaAs

Author keywords

GaAs; High k thin films; Interface; Self cleaning; Surface pretreatment

Indexed keywords

CAPACITANCE; CLEANING; GALLIUM ARSENIDE; HAFNIUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HIGH-K DIELECTRIC; III-V SEMICONDUCTORS; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY;

EID: 84869504361     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.09.092     Document Type: Article
Times cited : (3)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.