Addition of HfO2 interface layer for improved synaptic performance of phase change memory (PCM) devices

Solid-State Electronics

Volumn 79, Issue , 2013, Pages 227-232

  Suri, M ^a   Bichler, O ^b   Hubert, Q ^a   Perniola, L ^a   Sousa, V ^a   Jahan, C ^a   Vuillaume, D ^c   Gamrat, C ^b   Desalvo, B ^a  

^a CEA LETI   (France)

^b CEA LIST   (France)

^c INSTITUT D ELECTRONIQUE   (France)

Author keywords

Bio inspired computing; Interface engineering; Phase change memory; Spike time dependent plasticity; Visual pattern extraction

Indexed keywords

BIO-INSPIRED COMPUTING; DETECTION RATES; INTERFACE ENGINEERING; INTERFACE LAYER; INTERMEDIATE RESISTANCE; LEARNING MODE; NEUROMORPHIC; NEUROMORPHIC SYSTEMS; PATTERN EXTRACTION; REAL WORLD DATA; SPIKE TIME DEPENDENT PLASTICITIES; SPIKING NEURAL NETWORKS; SYNAPTIC POTENTIATION; SYNAPTIC WEIGHT; TEST CASE; TOTAL POWER; VISUAL PATTERN;

HAFNIUM OXIDES; NEURAL NETWORKS;

PHASE CHANGE MEMORY;

EID: 84869491975     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.09.006     Document Type: Article

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