Emitter passivation by charge injection

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2011, Pages 001771-001774

  Wilson, M ^a   Lagowski, J ^a   Savtchouk, A ^a   Findlay, A ^a   Jastrzebski, L ^a   Olibet, S ^b   Mihailetchi, V D ^b  

^a Semilab SDI LLC   (United States)

^b ISC Konstanz   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CORONA CHARGE; DIELECTRIC STACK; DIELECTRIC SURFACE; FIELD-EFFECT; INTERFACIAL REGION; POSITIVE CORONA; SATURATION CURRENT;

ELECTRON TUNNELING; INTERFACE STATES; PHOTOVOLTAIC EFFECTS; SILICON NITRIDE;

PASSIVATION;

EID: 84861023017     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6186297     Document Type: Conference Paper

References (7)

1. M. Wilson et. al., "Novel Noncontact Approach to Monitoring the Field-Effect Passivation of Emitters", in 2011 Silicon PV conference proceedings, April 17, 2011 Freiburg, Germany.
2. 2-Si Interface", Journal of Applied Physics, 86 (1), 683-691 (1999).
3. 3-Passivated Boron Emitters", Appl. Phys. Lett. 92, 253504 (2008).
4. M. Wilson et al., "The Present Status and Recent Advancements in Corona-Kelvin Non-contact Electrical Metrology of Dielectrics for IC-manufacturing", ECS Transactions, 3 (3) 3-24 (2006).
5. T. Boescke "Charge-SPV" 2010, unpublished.
6. M. Wilson et al., "QSS-μPCD Measurement of Lifetime in Silicon PV Wafers: Advantages and New Applications", to be published in 2011 Silicon PV conference proceedings, April 17-20, 2011 Freiberg, Germany.
7. D.E. Kane and R.M. Swanson "Measurement of the Emitter Saturation Current by a Contactless Photoconductivity Decay Method", Proc. 18th IEEE Photovoltaic Specialist Cont., Las Vegas, 1985, IEEE, New York, 1985, p. 578-583.