-
1
-
-
0016585741
-
Optical properties of the comsat non-reflective cell
-
Scottsdale, AZ
-
R. A. Arndt, J. F. Allison, and A. Meulenberg, "Optical properties of the Comsat non-reflective cell," in Proc. 11th IEEE Photovoltaics Spec. Conf., Scottsdale, AZ, 1975, pp. 40-43.
-
(1975)
Proc. 11th IEEE Photovoltaics Spec. Conf.
, pp. 40-43
-
-
Arndt, R.A.1
Allison, J.F.2
Meulenberg, A.3
-
2
-
-
0035203023
-
High performance light trapping textures for monocrystalline silicon solar cells
-
P. Campbell and M. A. Green, "High performance light trapping textures for monocrystalline silicon solar cells," Solar Energy Mater. Solar Cells, vol. 65, pp. 369-375, 2001.
-
(2001)
Solar Energy Mater. Solar Cells
, vol.65
, pp. 369-375
-
-
Campbell, P.1
Green, M.A.2
-
3
-
-
0029327828
-
Twenty-four percent efficient silicon solar cells with double layer antireflection coatings and reduced resistance loss
-
J. Zhao, A. Wang, P. Altermatt, and M. A. Green, "Twenty-four percent efficient silicon solar cells with double layer antireflection coatings and reduced resistance loss," Appl. Phys. Lett., vol. 66, no. 26, pp. 3636-3638, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.66
, Issue.26
, pp. 3636-3638
-
-
Zhao, J.1
Wang, A.2
Altermatt, P.3
Green, M.A.4
-
4
-
-
0001397243
-
19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline silicon solar cells
-
DOI 10.1063/1.122345, PII S0003695198008407
-
J. Zhao, A.Wang, M. A. Green, and F. Ferrazza, "19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline solar cells," Appl. Phys. Lett., vol. 73, no. 14, pp. 1991-1993, 1998. (Pubitemid 128672047)
-
(1998)
Applied Physics Letters
, vol.73
, Issue.14
, pp. 1991-1993
-
-
Zhao, J.1
Wang, A.2
Green, M.A.3
Ferrazza, F.4
-
5
-
-
78650117259
-
Single side etchingkey technology for industrial high efficiency processing
-
J. Rentsch, L. Gautero, A. Lemke, S. Eigner, M. Zimmer, F. Walter, M. Hofmann, and R. Preu, "Single side etching-Key technology for industrial high efficiency processing," in Proc. 23rd Eur. Photovoltaic Solar Energy Conf., 2008, pp. 1889-1892.
-
(2008)
Proc. 23rd Eur. Photovoltaic Solar Energy Conf.
, pp. 1889-1892
-
-
Rentsch, J.1
Gautero, L.2
Lemke, A.3
Eigner, S.4
Zimmer, M.5
Walter, F.6
Hofmann, M.7
Preu, R.8
-
6
-
-
0019529879
-
Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers
-
E. H. Poindexter, P. J. Caplan, B. E. Deal, and R. R. Razouk, "Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers," J. Appl. Phys., vol. 52, no. 2, pp. 879-884, 1981.
-
(1981)
J. Appl. Phys.
, vol.52
, Issue.2
, pp. 879-884
-
-
Poindexter, E.H.1
Caplan, P.J.2
Deal, B.E.3
Razouk, R.R.4
-
7
-
-
0036503787
-
2 interfacial properties following rapid thermal annealing
-
DOI 10.1149/1.1447946
-
P. K. Hurley, B. J. O'Sullivan, F. N. Cubaynes, P. A. Stolk, F. P. Widdershoven, and J. H. Das, "Examination of the Si(111)-SiO2, and Si(100)- SiO2 interfacial properties following rapid thermal annealing," J. Electrochemical Soc., vol. 149, no. 3, pp. G194-G197, 2002. (Pubitemid 34325889)
-
(2002)
Journal of the Electrochemical Society
, vol.149
, Issue.3
-
-
Hurley, P.K.1
O'Sullivan, B.J.2
Cubaynes, F.N.3
Stolk, P.A.4
Widdershoven, F.P.5
Das, J.H.6
-
8
-
-
78650155219
-
Study of silicon-silicon nitride interface properties on planar (100), planar (111) and textured surfaces using deep-level transient spectroscopy
-
C. Gong, E. Simoen, N. E. Posthuma, E. Van Kerschaver, J. Poortmans, and R. Mertens, "Study of silicon-silicon nitride interface properties on planar (100), planar (111) and textured surfaces using deep-level transient spectroscopy," J. Phys. D: Appl. Phys., vol. 43, pp. 485301-1-485301-6, 2010.
-
(2010)
J. Phys. D: Appl. Phys.
, vol.43
, pp. 485301-485301
-
-
Gong, C.1
Simoen, E.2
Posthuma, N.E.3
Van Kerschaver, E.4
Poortmans, J.5
Mertens, R.6
-
9
-
-
27844599617
-
Minimizing lifetime degradation associated with thermal oxidation of upright randomly textured silicon surfaces
-
DOI 10.1016/j.solmat.2005.03.008, PII S0927024805000814
-
P. J. Cousins and J. E. Cotter, "Minimizing lifetime degradation associated with thermal oxidation of upright randomly textured silicon surfaces," Solar Energy Mater. Solar Cells, vol. 90, no. 2, pp. 228-240, 2006. (Pubitemid 41653211)
-
(2006)
Solar Energy Materials and Solar Cells
, vol.90
, Issue.2
, pp. 228-240
-
-
Cousins, P.J.1
Cotter, J.E.2
-
10
-
-
41749115714
-
Pecvd silicon nitride surface passivation for high-efficiency n-type silicon solar cells
-
F. W. Chen, T.-T. A. Li, and J. E. Cotter, "PECVD silicon nitride surface passivation for high-efficiency n-type silicon solar cells," in Proc. 4th World Conf. Photovoltaic Energy Convers., 2006, pp. 1020-1023.
-
(2006)
Proc. 4th World Conf. Photovoltaic Energy Convers.
, pp. 1020-1023
-
-
Chen, F.W.1
A. Li, T.-T.2
Cotter, J.E.3
-
11
-
-
41749108398
-
The effect of a post oxidation in-situ nitrogen anneal on si surface passivation
-
DOI 10.1109/WCPEC.2006.279326, 4059817, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
-
H. Jin, K. J. Weber, and A. W. Blakers, "The effect of a post oxidation in-situ nitrogen anneal on Si surface passivation," in Proc. 4thWorld Conf. Photovoltaic Energy Convers., 2006, pp. 1071-1073. (Pubitemid 351485179)
-
(2007)
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
, vol.1
, pp. 1071-1073
-
-
Jin, H.1
Weber, K.J.2
Blakers, A.W.3
-
12
-
-
36449002905
-
Record low surface recombination velocities on 1 cm p-silicon using remote plasma silicon nitride passivation
-
DOI 10.1063/1.115936, PII S0003695196025090
-
T. Lauinger, J. Schmidt, A. G. Aberle, and R. Hezel, "Record low surface recombination velocites on 1 Ωcm p-silicon using remote plasma silicon nitride passivation," Appl. Phys. Lett., vol. 68, no. 9, pp. 1232-1234, 1996. (Pubitemid 126684140)
-
(1996)
Applied Physics Letters
, vol.68
, Issue.9
, pp. 1232-1234
-
-
Lauinger, T.1
Schmidt, J.2
Aberle, A.G.3
Hezel, R.4
-
13
-
-
0001610131
-
Comprehensive study of rapid, low-cost silicon surface passivation technologies
-
May
-
A. Rohatgi, P. Doshi, J. Moschner, T. Lauinger, A. G. Aberle, and D. S. Ruby, "Comprehensive study of rapid, low-cost silicon surface passivation technologies," IEEE Trans. Electron. Devices, vol. 47, no. 5, pp. 987-993, May 2000.
-
(2000)
IEEE Trans. Electron. Devices
, vol.47
, Issue.5
, pp. 987-993
-
-
Rohatgi, A.1
Doshi, P.2
Moschner, J.3
Lauinger, T.4
Aberle, A.G.5
Ruby, D.S.6
-
14
-
-
33244463818
-
Surface texturing of crystalline silicon and effective area measurement
-
S. Tietun, C. Dong, and C. Rongqiang, "Surface texturing of crystalline silicon and effective area measurement," in Proc. 4th Int. Conf. Thin Films Phys. Appl., 2000, pp. 116-119.
-
(2000)
Proc. 4th Int. Conf. Thin Films Phys. Appl.
, pp. 116-119
-
-
Tietun, S.1
Dong, C.2
Rongqiang, C.3
-
15
-
-
84861044773
-
Texture process monitoring in solar cell manufacturing using optical metrology
-
to be published.
-
V.Velidandla, J. Xu, Z.Hou, K.Wijekoon, andD. Tanner, "Texture process monitoring in solar cell manufacturing using optical metrology," in Proc. 37th IEEE Photovoltaics Spec. Conf., 2011, to be published.
-
(2011)
Proc. 37th IEEE Photovoltaics Spec. Conf.
-
-
Velidandla, V.1
Xu, J.2
Hou, Z.3
Wijekoon, K.4
Tanner, D.5
-
16
-
-
39449139356
-
Surface passivation and heterojunction cells on si (100) and (111) wafers using dc and rf plasma deposited si:h thin films
-
U. K. Das, M. Z. Burrows,M.Lu, S. Bowden, and R.W. Birkmire, "Surface passivation and heterojunction cells on Si (100) and (111) wafers using dc and rf plasma deposited Si:H thin films," Appl. Phys. Lett., vol. 92, pp. 063504-1-063504-3, 2008.
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 063504-063501
-
-
Das, U.K.1
Burrows, M.Z.2
Lu, M.3
Bowden, S.4
Birkmire, R.W.5
-
17
-
-
67650230204
-
Recombination at textured silicon surfaces passivated with silicon dioxide
-
K. R. McIntosh and L. P. Johnson, "Recombination at textured silicon surfaces passivated with silicon dioxide," J. Appl. Phys., vol. 105, pp. 124520- 1-124520-10, 2009.
-
(2009)
J. Appl. Phys.
, vol.105
, pp. 124520-124521
-
-
McIntosh, K.R.1
Johnson, L.P.2
-
18
-
-
18644375512
-
Numerical modelling of highly doped si:p emitters based on fermi-dirac statistics and self-consistent material parameters
-
P. Altermatt, J. O. Schumacher, A. Cuevas, M. J. Kerr, S. W. Glunz, R. R. King, G. Heiser, and A. Schenk, "Numerical modelling of highly doped Si:P emitters based on Fermi-Dirac statistics and self-consistent material parameters," J. Appl. Phys., vol. 92, no. 6, pp. 3187-3197, 2002.
-
(2002)
J. Appl. Phys.
, vol.92
, Issue.6
, pp. 3187-3197
-
-
Altermatt, P.1
Schumacher, J.O.2
Cuevas, A.3
Kerr, M.J.4
Glunz, S.W.5
King, R.R.6
Heiser, G.7
Schenk, A.8
-
19
-
-
0025387203
-
Studies of diffused phosphorus emitters: Saturation current, surface recombination velocity, and quantum efficiency
-
DOI 10.1109/16.46368
-
R. R. King, R. A. Sinton, and R. M. Swanson, "Studies of diffused phosphorus emitters: Saturation current, surface recombination velocity, and quantum efficiency," IEEE Trans. Electron. Devices, vol. 37, no. 2, pp. 365-371, Feb. 1990. (Pubitemid 20666236)
-
(1990)
IEEE Transactions on Electron Devices
, vol.37
, Issue.2
, pp. 365-371
-
-
King, R.R.1
Sinton, R.A.2
Swanson, R.M.3
-
20
-
-
6244265927
-
Emitter dark saturation currents of high-efficiency solar cells with inverted pyramids
-
Nice, France
-
S. W. Glunz, S. Sterk, R. Steeman, W. Warta, J. Knoblosh, and W. Wettling, "Emitter dark saturation currents of high-efficiency solar cells with inverted pyramids," in Proc. 13th Eur. Photovoltaic Solar Energy Conf., Nice, France, 1995, pp. 409-412.
-
(1995)
Proc. 13th Eur. Photovoltaic Solar Energy Conf.
, pp. 409-412
-
-
Glunz, S.W.1
Sterk, S.2
Steeman, R.3
Warta, W.4
Knoblosh, J.5
Wettling, W.6
-
21
-
-
78650146154
-
Influence of emitter profile characteristics on thermal stability and passivation quality of a-si/sinx -passivated boron emitters
-
Honolulu, HI
-
M. Kessler, S. Gatz, P. Altermatt, N.-P. Harder, and R. Brendel, "Influence of emitter profile characteristics on thermal stability and passivation quality of a-Si/SiNx -passivated boron emitters," in Proc. 35th IEEE Photovoltaics Spec. Conf., Honolulu, HI, 2010, pp. 359-363.
-
(2010)
Proc. 35th IEEE Photovoltaics Spec. Conf.
, pp. 359-363
-
-
Kessler, M.1
Gatz, S.2
Altermatt, P.3
Harder, N.-P.4
Brendel, R.5
-
23
-
-
41749120085
-
Depassivation of si-sio2 interface following rapid thermal annealing
-
H. Jin, K. J.Weber, andA.W.Blakers, "Depassivation of Si-SiO2 interface following rapid thermal annealing," in Proc. 4thWorld Conf. Photovoltaic Energy Convers., 2006, pp. 1078-1080.
-
(2006)
Proc. 4thWorld Conf. Photovoltaic Energy Convers.
, pp. 1078-1080
-
-
Jin, H.1
Weber, K.J.2
Blakers, A.W.3
-
24
-
-
80052092112
-
A study of the surface morphology of silicon: Effect of parasitic emitter etching on the rear-side performance of silicon solar cells
-
A. Dastgheib-Shirazi, M. Steyer, J. Junge, S. Gingner, and G. Hahn, "A study of the surface morphology of silicon: Effect of parasitic emitter etching on the rear-side performance of silicon solar cells," in Proc. 25th Eur. Photovoltaic Solar Energy Conf., 2010, pp. 2107-2113.
-
(2010)
Proc. 25th Eur. Photovoltaic Solar Energy Conf.
, pp. 2107-2113
-
-
Dastgheib-Shirazi, A.1
Steyer, M.2
Junge, J.3
Gingner, S.4
Hahn, G.5
-
25
-
-
84865156348
-
-
WCT-120. Online. Available:
-
WCT-120. (2011). Online. Available: http://www.sintoninstruments. com
-
(2011)
-
-
-
27
-
-
33845421788
-
General parameterization of auger recombination in crystalline silicon
-
M. J. Kerr and A. Cuevas, "General parameterization of Auger recombination in crystalline silicon," J. Appl. Phys., vol. 91, no. 4, pp. 2473-2480, 2002.
-
(2002)
J. Appl. Phys.
, vol.91
, Issue.4
, pp. 2473-2480
-
-
Kerr, M.J.1
Cuevas, A.2
-
28
-
-
0001060922
-
Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors
-
A. B. Sproul, "Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors," J. Appl. Phys., vol. 76, no. 5, pp. 2851-2854, 1994.
-
(1994)
J. Appl. Phys.
, vol.76
, Issue.5
, pp. 2851-2854
-
-
Sproul, A.B.1
-
29
-
-
0028510757
-
Morphology of etch hillock defects created during anisotropic etching of silicon
-
S.-S. Tan, M. Reed,H.Han, and R. Boudreau, "Morphology of etch hillock defects created during anisotropic etching of silicon," J. Micromech. Mocroeng., vol. 4, pp. 147-155, 1994.
-
(1994)
J. Micromech. Mocroeng.
, vol.4
, pp. 147-155
-
-
Tan, S.-S.1
Reed, M.2
Han, H.3
Boudreau, R.4
-
30
-
-
45849102121
-
Optimisation of electronic interface properties of a-si:h/c-si hetero-junction solar cells by wet-chemical surface pre-treatment
-
H. Angermann, L. Korte, J. Rappich, E. Conrad, I. Sieber, M. Schmidt, K. Hubener, and J. Hauschild, "Optimisation of electronic interface properties of a-Si:H/c-Si hetero-junction solar cells by wet-chemical surface pre-treatment," Thin Solid Films, vol. 516, pp. 6775-6781, 2008.
-
(2008)
Thin Solid Films
, vol.516
, pp. 6775-6781
-
-
Angermann, H.1
Korte, L.2
Rappich, J.3
Conrad, E.4
Sieber, I.5
Schmidt, M.6
Hubener, K.7
Hauschild, J.8
-
31
-
-
21544464097
-
Stress in thermal sio2 during growth
-
E. P. EerNisse, "Stress in thermal SiO2 during growth," Appl. Phys. Lett., vol. 35, no. 1, pp. 8-10, 1979.
-
(1979)
Appl. Phys. Lett.
, vol.35
, Issue.1
, pp. 8-10
-
-
EerNisse, E.P.1
-
32
-
-
0023344918
-
Twodimensional thermal oxidation of siliconi. Experiments
-
May
-
D. B. Kao, J. P. McVittie, W. D. Nix, and K. C. Saraswat, "Twodimensional thermal oxidation of silicon-I. Experiments," IEEE Trans. Electron Devices, vol. ED-34, no. 5, pp. 1008-1017, May 1987.
-
(1987)
IEEE Trans. Electron Devices
, vol.ED-34
, Issue.5
, pp. 1008-1017
-
-
Kao, D.B.1
McVittie, J.P.2
Nix, W.D.3
Saraswat, K.C.4
-
33
-
-
84948611938
-
Buried-contact silicon solar cells
-
S.Wenham, "Buried-Contact silicon solar cells," Progress Photovoltaics: Res. Appl., vol. 1, pp. 3-10, 1993.
-
(1993)
Progress Photovoltaics: Res. Appl.
, vol.1
, pp. 3-10
-
-
Wenham, S.1
|