Understanding light-induced degradation of c-Si solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2012, Pages 1115-1120

  Sopori, Bhushan ^a   Basnyat, Prakash ^a,b   Devayajanam, Srinivas ^a,b   Shet, Sudhakar ^a,b   Mehta, Vishal ^a,b   Binns, Jeff ^c   Appel, Jesse ^d  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^c MEMC Electronic Materials   (United States)

^d MEMC Electronic Materials Inc   (United States)

Author keywords

annealing; bulk; crystalline silicon; light induced degradation; minority carrier lifetime; solar cells; surface

Indexed keywords

ANNEALING TIME; BORON-OXYGEN DEFECTS; BULK; BULK DEGRADATION; BULK EFFECT; C-SI SOLAR CELL; CELL PARAMETER; CRYSTALLINE SILICONS; LIGHT-INDUCED DEGRADATION; LOW OXYGEN; MINORITY CARRIER LIFETIMES; SATURATION CURRENT; SURFACE COMPONENTS; SURFACE DEGRADATION; SURFACE RECOMBINATIONS; THERMAL RECOVERY;

ANNEALING; BORON; MOLECULAR BIOLOGY; OXYGEN; SILICON; SILICON NITRIDE; SILICON SOLAR CELLS; SOLAR CELLS; SURFACES; THERMAL OIL RECOVERY;

SILICON WAFERS;

EID: 84869413493     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6317798     Document Type: Conference Paper

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