Wafer preparation and iodine-ethanol passivation procedure for reproducible minority-carrier lifetime measurement

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2008, Pages

  Sopori, Bhushan ^a   Rupnowski, Przemyslaw ^a   Appel, Jesse ^a   Mehta, Vishal ^a   Li, Chuan ^a   Johnston, Steve ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION TIME; BULK LIFETIME; CLEANING PROCEDURES; MINORITY CARRIER LIFETIMES; SOLAR SIMULATOR; SURFACE PASSIVATION; TWO SOURCES; WAFER CLEANING;

PASSIVATION;

SILICON WAFERS;

EID: 84869421101     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2008.4922688     Document Type: Conference Paper

References (7)

1. T. S. Horanyi, et al., In situ bulk lifetime measurement on silicon with a chemically passivated surface. Applied Surface Science 63 (1993) 306-311
2. H. M'saad, et al., Monitoring and optimization of silicon surface quality. J. Electrochem. Soc. 142, 8, Aug. 1995.
3. O. Palais, et al. Contactless mapping of lifetime and diffusion length scan map of minority carriers in silicon wafers. Eur. Physical J: Appl. Physics 10, 157-162 (2000).
4. W. J. Royea, et al., Role of inversion layer formation in producing low effective surface recombination velocities at Si/liquid contacts. Appl. Phy. Lett. 77, 16, 16 Oct. 2000.
5. D. H. Macdonald, et al., Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping. J. Appl. Phy. 95, 3, 1 Feb. 2004.
6. M. Bail and R. Brendel. Separation of bulk and surface recombination by steady state photo conductance measurements. U/h European Photovoltaic Solar Energy Conference, 1-5 May 2000, Glasgow, UK.
7. A. Buczkowski, et al., Photoconductance minority carrier lifetime vs. surface photovoltage diffusion length in silicon. J. Electrochem. Soc. 140, 11, Nov. 1993.