A CMOS image sensor based on unified pixel architecture with time-division multiplexing scheme for color and depth image acquisition

IEEE Journal of Solid-State Circuits

Volumn 47, Issue 11, 2012, Pages 2834-2845

  Kim, Seong Jin ^a   Kim, James D K ^b   Kang, Byongmin ^b   Lee, Keechang ^b  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Binning operation; charge transfer speed; CMOS image sensor; demodulation pixel; depth sensor; four shared architecture; high gain readout; multiresolution; range finding; standard pinned photodiode; three dimensional (3 D) image sensor; time division; time of flight (TOF)

Indexed keywords

BINNING OPERATION; CMOS IMAGE SENSOR; DEPTH SENSORS; HIGH-GAIN; MULTI-RESOLUTIONS; THREEDIMENSIONAL (3-D); TIME OF FLIGHT; TIME-DIVISION;

CHARGE TRANSFER; DEMODULATION; DIGITAL CAMERAS; DIODES; OPTICAL VARIABLES MEASUREMENT; PHOTODIODES; RANGE FINDING; THREE DIMENSIONAL; TIME DIVISION MULTIPLEXING;

PIXELS;

EID: 84869229082     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2012.2214179     Document Type: Article

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