A 640x480 image sensor with unified pixel architecture for 2D/3D imaging in 0.11μm CMOS

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2011, Pages 92-93

  Kim, Seong Jin ^a   Kim, James D K ^a   Han, Sang Wook ^a   Kang, Byongmin ^a   Lee, Keechang ^a   Kim, Chang Yeong ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

3-D IMAGE; COLOR AND DEPTH IMAGES; INFRARED LIGHT; PIXEL ARCHITECTURES; PROTOTYPE SENSOR; READOUT TRANSISTORS; SINGLE CHIPS; TIME MULTIPLEXED; TIME OF FLIGHT;

IMAGE SENSORS; PIXELS; SENSORS; VLSI CIRCUITS;

THREE DIMENSIONAL;

EID: 80052667349     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. H. K. Lim, "The 2nd wave of the digital consumer revolution: challenges and opportunities!," in IEEE Int. Solid-State Circuits Conf. (ISSCC'08) Dig., pp. 18-23, Feb. 2008.
2. S. Fujikawa, "Three-dimensional imaging technology: a revolution in the world of imaging," in Symposium on VLSI Circuits, pp. 9-12, June 2009.
3. S.-J. Kim et al., "A three-dimensional time-of-flight CMOS image sensor with pinned-photodiode pixel structure," IEEE Electron Device Lett., vol. 31, no. 11, pp. 1272-1274, Nov. 2010.