A three-dimensional time-of-flight CMOS image sensor with pinned-photodiode pixel structure

IEEE Electron Device Letters

Volumn 31, Issue 11, 2010, Pages 1272-1274

  Kim, Seong Jin ^a   Han, Sang Wook ^a   Kang, Byongmin ^a   Lee, Keechang ^a   Kim, James D K ^a   Kim, Chang Yeong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

3 D pixel; CMOS image sensor; depth image; pinned photodiode; time of flight (TOF)

Indexed keywords

3-D PIXEL; CMOS IMAGE SENSOR; DEPTH IMAGE; PINNED PHOTODIODE; TIME OF FLIGHT;

CHARGE TRANSFER; DIGITAL CAMERAS; IMAGE SENSORS; ION EXCHANGE; PHOTODIODES; THREE DIMENSIONAL;

PIXELS;

EID: 78049298179     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2066254     Document Type: Article

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