1/4-inch 2-mpixel MOS image sensor with 1.75 transistors/pixel

IEEE Journal of Solid-State Circuits

Volumn 39, Issue 12, 2004, Pages 2426-2430

  Mori, Mitsuyoshi ^a   Katsuno, Motonari ^a   Kasuga, Shigetaka ^a   Murata, Takahiko ^a   Yamaguchi, Takumi ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

MOS image sensor; Optical format; Pixel configuration; Pixel design; Pixel size; Sensitivity; Supply voltage

Indexed keywords

AMPLIFIERS (ELECTRONIC); ELECTRIC POTENTIAL; MICROPROCESSOR CHIPS; MOS DEVICES; OPTICAL RESOLVING POWER; OPTIMIZATION; PHOTODIODES; TRANSISTORS;

MOS IMAGE SENSORS; OPTICAL FORMATS; PIXEL CONFIGURATION; PIXEL DESIGN; PIXEL SIZE; SENSITIVITY; SUPPLY VOLTAGE;

IMAGE SENSORS;

EID: 10444227264     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2004.837028     Document Type: Conference Paper

References (3)

1. R. Nixon et al., "256 × 256 CMOS active pixel sensor camera-on-a-chip." in IEEE ISSCC Dig. Tech. Papers. Feb. 1996, pp. 178-179.
2. S.-G. Wuu et al., "A high performance active pixel sensor with 0.18 μm CMOS color imager technology." in Int. Electron Devices Meeting (IEDM) Tech. Dig., 2001, pp. 24.3.1-24.3.4.
3. S. Kawahito et al., "A column-based pixel gain adaptive CMOS image sensor for low-light-level imaging," in IEEE ISSCC Dig. Tech. Papers, Feb. 2003, pp. 224-225.