CMOS 3D image sensor based on pulse modulated time-of-flight principle and intrinsic lateral drift-field photodiode pixels

European Solid-State Circuits Conference

Volumn , Issue , 2011, Pages 111-114

  Spickermann, Andreas ^a   Durini, Daniel ^a   Süss, Andreas ^a   Ulfig, Wiebke ^a   Brockherde, Werner ^a   Hosticka, Bedrich J ^a   Schwope, Stefan ^b   Grabmaier, Anton ^a  

^a FRAUNHOFER INSTITUTE FOR MICROELECTRONIC CIRCUITS AND SYSTEMS   (Germany)

^b TriDiCam GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAMERA SYSTEMS; LASER ILLUMINATION; MEASUREMENT RESULTS; PIXEL SENSORS; SCENE RECONSTRUCTION; SIGNAL CHARGE; SIGNAL TO NOISE; THREE-DIMENSIONAL (3D); TIME OF FLIGHT;

CHARGE TRANSFER; PHOTODIODES; PIXELS; SENSORS; SIGNAL TO NOISE RATIO;

THREE DIMENSIONAL;

EID: 82955187858     PISSN: 19308833     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSCIRC.2011.6044927     Document Type: Conference Paper

References (7)

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2. O. Elkhalili, et al., "A 4x64 pixel CMOS image sensor for 3D measurement applications", IEEE J. of Solid-State Circuits, vol. 39, no. 7, pp. 1208-1212, July 2004.
3. R. Lange, et al., "Solid-state time-of-flight range camera", IEEE J. of Quantum Electronics, vol. 37, no. 3, pp. 390-397, March 2001. (Pubitemid 32286777)
4. D. Durini, et al., "Lateral drift-field photodiode for low-noise, high-speed, large photoactive-area CMOS imaging applications", Nuclear Instruments and Methods in Physics Research A 624, pp. 470-475, 2010.
5. B. Büttgen et al., Robust Optical Time-of-Flight Range Imaging Based on Smart Pixel Structures", IEEE, Trans. On Circ. And Syst. I, Vol. 55, No. 6, pp. 1512-1525, Juli 2008.
6. C. Tubert, et al., "High speed dual port pinned-photodiode for time-of- flight imaging", Proc. IISW 2009.
7. Takeshita, et al., "High-speed charge transfer pinned-photodiode for a CMOS time-of-flight range image sensor", Proc. of SPIE-IS&T Electronic Imaging, Vol. 7536, 2010