A 1.5Mpixel RGBZ CMOS image sensor for simultaneous color and range image capture

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 55, Issue , 2012, Pages 392-393

  Kim, Wonjoo ^a   Yibing, Wang ^b   Ovsiannikov, Ilia ^b   Lee, Seunghoon ^a   Park, Yoondong ^a   Chung, Chilhee ^a   Fossum, Eric ^a,b  

^a SAMSUNG Electronics   (South Korea)

^b Samsung Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS IMAGE SENSOR; PIXEL STRUCTURE; RANGE IMAGES; TIME OF FLIGHT;

COLOR; OPTIMIZATION; SENSORS;

PIXELS;

EID: 84860673366     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2012.6177061     Document Type: Conference Paper

References (6)

1. R. Miyagawa and T. Kanade, "CCD-based range finding sensor," IEEE Trans. Electron Devices, vol. 44, no. 10, pp. 1648-1652, 1997.
2. R. Lange, et al., "Demodulation Pixels in CCD and CMOS Technologies for Time-of-Flight Ranging", Proc. of SPIE, vol. 3965A, pp. 177, 2000.
3. S.J. Kim, J. Kim, S.W. Han, B.M. Kang, K.C. Lee, and C-Y Kim, "A 640x480 Image Sensor with Unified Pixel Architecture for 2D/3D Imaging in 0.11μm CMOS", IEEE Symp. VLSI Circuits, pp. 92-93, June 2011.
4. V. Berezin, A. Krymski, and E.R. Fossum, "Lock-In Pinned Photodiode Photodetector," US Patent No. 6,239,456, 2001.
5. D. Stoppa, et al., "A Range Image Sensor Based on 10μm Lock-In Pixels in 0.18μm CMOS Imaging Technology," IEEE J. Solid-State Circuits, vol. 46, no. 1, pp. 248-258, Jan. 2011.
6. T.-Y. Lee, et al., "Dark Current Suppression During High Speed Photogate Modulation for 3D ToF Imaging Pixel," Proc. Int. Image Sensor Workshop, June 2011.