Design principles for photovoltaic devices based on Si nanowires with axial or radial p-n junctions

Nano Letters

Volumn 12, Issue 11, 2012, Pages 6024-6029

  Christesen, Joseph D ^a   Zhang, Xing ^a   Pinion, Christopher W ^a   Celano, Thomas A ^a   Flynn, Cory J ^a   Cahoon, James F ^a  

^a University of North Carolina at Chapel Hill   (United States)

Author keywords

device simulation; p n junction; photodiode; photovoltaic; Si nanowire; solar cell

Indexed keywords

BULK LIFETIME; CURRENT-VOLTAGE DATA; DEPLETION REGION; DESIGN PRINCIPLES; DEVICE SIMULATIONS; DIVERSE RANGE; DOPING LEVELS; ELECTRICAL CHARACTERISTIC; EXPERIMENTAL MEASUREMENTS; FINITE ELEMENT MODELING; HIGH SURFACE-TO-VOLUME RATIO; INTERNAL QUANTUM EFFICIENCY; MINORITY CARRIER LIFETIMES; NANOSCALE STRUCTURE; P-N JUNCTION; P-TYPE; PHOTONIC TECHNOLOGIES; PHOTOVOLTAIC; PHOTOVOLTAIC DEVICES; PHOTOVOLTAIC PERFORMANCE; POWER CONVERSION EFFICIENCIES; RADIAL DIRECTION; SEMICONDUCTOR NANOWIRE; SI NANOWIRE; SUN ILLUMINATION; SURFACE RECOMBINATION VELOCITIES; SURFACE RECOMBINATIONS; VAPOR-LIQUID-SOLID MECHANISM;

CONVERSION EFFICIENCY; DESIGN; DIODES; FINITE ELEMENT METHOD; HETEROJUNCTIONS; NANOWIRES; PHOTODIODES; SEMICONDUCTOR DOPING; SILICON; SOLAR CELLS; SOLAR POWER GENERATION; VAPORS;

SEMICONDUCTOR DEVICES;

EID: 84869177295     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl303610m     Document Type: Article

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