Si nanopillar array surface-textured thin-film solar cell with radial p-n junction

IEEE Electron Device Letters

Volumn 32, Issue 2, 2011, Pages 176-178

  Wong, S M ^a,b   Yu, H Y ^a,b   Li, J S ^a,b   Li, Y L ^a,b   Singh, N ^b   Lo, Patrick G Q ^b   Kwong, D L ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Power conversion efficiency (PCE); Si nanopillar (SiNP); solar cell

Indexed keywords

BACK SURFACE FIELDS; DOPING CONCENTRATION; ELECTRICAL CHARACTERISTIC; KEY FACTORS; MINORITY CARRIER DIFFUSION LENGTH; NANOPILLAR; P-N JUNCTION; POWER CONVERSION EFFICIENCIES; SHELL THICKNESS; SI NANO-PILLAR ARRAY; SURFACE RECOMBINATION VELOCITIES; THIN-FILM SOLAR CELLS;

CARRIER CONCENTRATION; CONVERSION EFFICIENCY; SEMICONDUCTOR JUNCTIONS; SILICON;

SOLAR CELLS;

EID: 79151475444     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2091715     Document Type: Article

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