Generation of cubic phase in molecular-beam-epitaxy-grown hexagonal InGaN epilayers on InN

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 1 A, 2006, Pages 57-60

  Kitamura, Toshio ^a,c   Shen, Xu Qiang ^a,b   Sugiyama, Mutsumi ^c   Nakanishi, Hisayuki ^c   Shimizu, Mitsuaki ^a,b   Okumura, Hajime ^a,b,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

EDX; InGaN; InN; rf MBE; TEM; XRD

Indexed keywords

CRYSTALLOGRAPHY; DEGRADATION; MOLECULAR BEAM EPITAXY;

CUBIC PHASE; GROWTH TEMPERATURE; MOLAR FRACTIONS; RF-MBE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 31544474607     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.57     Document Type: Article

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