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Volumn 70, Issue 23, 2004, Pages 1-8

Size, shape, and strain dependence of the g factor in self-assembled In(Ga)As quantum dots

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; ATOMIC PARTICLE; EXCITON; MAGNETIC FIELD; MATHEMATICAL ANALYSIS; PHOTOLUMINESCENCE; QUANTUM DOT; QUANTUM YIELD;

EID: 13944282517     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.235337     Document Type: Article
Times cited : (122)

References (45)
  • 25
    • 13944260211 scopus 로고    scopus 로고
    • note
    • It should be noted that the charged excitons formed due to residual background doping which can occur even in nominally undoped structures may show such a linear power dependence. However, the exciton g factor should be identical to that of a neutral exciton, as long as the electronic band structure is identical to that of an uncharged dot. If the impurity or the dopant is located near the dot, the excitation power dependence of the emission spectra and the g factor should be changed largely (see Ref. 9). However, we did not observe such large variations in the magneto-optic spectra.
  • 29
    • 85088492760 scopus 로고    scopus 로고
    • note
    • L(0), on the basis of the eight band k·p Zeeman Hamiltonian given in the text. Using the value shown in Table I, one easily finds that the absolute value of the exciton g factor in InAs is larger than in GaAs.
  • 34
    • 0038736591 scopus 로고    scopus 로고
    • edited by M. Grundmann (Springer-Verlag, Berlin)
    • O. Stier, in Nano-Optoelectronics, edited by M. Grundmann (Springer-Verlag, Berlin, 2002), p. 167.
    • (2002) Nano-Optoelectronics , pp. 167
    • Stier, O.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.