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It should be noted that the charged excitons formed due to residual background doping which can occur even in nominally undoped structures may show such a linear power dependence. However, the exciton g factor should be identical to that of a neutral exciton, as long as the electronic band structure is identical to that of an uncharged dot. If the impurity or the dopant is located near the dot, the excitation power dependence of the emission spectra and the g factor should be changed largely (see Ref. 9). However, we did not observe such large variations in the magneto-optic spectra.
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L(0), on the basis of the eight band k·p Zeeman Hamiltonian given in the text. Using the value shown in Table I, one easily finds that the absolute value of the exciton g factor in InAs is larger than in GaAs.
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