메뉴 건너뛰기




Volumn 15, Issue 1, 2004, Pages 1-8

Bandstructures of conical quantum dots with wetting layers

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BOUNDARY CONDITIONS; EIGENVALUES AND EIGENFUNCTIONS; ELECTRONS; FINITE ELEMENT METHOD; ITERATIVE METHODS; MATHEMATICAL MODELS; SEMICONDUCTOR QUANTUM WELLS; WETTING;

EID: 0742269384     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/15/1/001     Document Type: Article
Times cited : (114)

References (23)
  • 1
    • 0028533154 scopus 로고
    • Calculation of the energy levels in InAs/GaAs quantum dots
    • Marzin J Y and Bastard G 1994 Calculation of the energy levels in InAs/GaAs quantum dots Solid State Commun. 92 437-42
    • (1994) Solid State Commun. , vol.92 , pp. 437-442
    • Marzin, J.Y.1    Bastard, G.2
  • 3
    • 0001089438 scopus 로고    scopus 로고
    • Electronic and optical properties of strained quantum dots modeled by 8 × 8-band k · p theory
    • Stier O, Grundmann M and Bimberg D 1999 Electronic and optical properties of strained quantum dots modeled by 8 × 8-band k · p theory Phys. Rev. B 59 5688-701
    • (1999) Phys. Rev. B , vol.59 , pp. 5688-5701
    • Stier, O.1    Grundmann, M.2    Bimberg, D.3
  • 4
    • 0001558745 scopus 로고
    • InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure
    • Grundmann M, Stier O and Bimberg D 1995 InAs/GaAs pyramidal quantum dots: strain distribution, optical phonons, and electronic structure Phys. Rev. B 52 11969-81
    • (1995) Phys. Rev. B , vol.52 , pp. 11969-11981
    • Grundmann, M.1    Stier, O.2    Bimberg, D.3
  • 5
    • 0032124118 scopus 로고    scopus 로고
    • Self-assembled semiconductor structures: Electronic and optoelectronic properties
    • Jiang H and Singh J 1998 Self-assembled semiconductor structures: electronic and optoelectronic properties IEEE J. Quantum Electron. 34 1188-96
    • (1998) IEEE J. Quantum Electron. , vol.34 , pp. 1188-1196
    • Jiang, H.1    Singh, J.2
  • 6
    • 0000347771 scopus 로고    scopus 로고
    • Presentation and experimental validation of a single-band, constant-potential model for self-assembled InAs/GaAs quantum dots
    • Califano M and Harrison P 2000 Presentation and experimental validation of a single-band, constant-potential model for self-assembled InAs/GaAs quantum dots Phys. Rev. B 61 10959-65
    • (2000) Phys. Rev. B , vol.61 , pp. 10959-10965
    • Califano, M.1    Harrison, P.2
  • 8
    • 0035889366 scopus 로고    scopus 로고
    • Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dots
    • Li Y et al 2001 Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dots Comput. Phys. Commun. 141 66-72
    • (2001) Comput. Phys. Commun. , vol.141 , pp. 66-72
    • Li, Y.1
  • 9
    • 0035455621 scopus 로고    scopus 로고
    • Modeling quantum structures with BEM
    • Gelbard F and Malloy K J 2001 Modeling quantum structures with BEM J. Comput. Phys. 172 19-39
    • (2001) J. Comput. Phys. , vol.172 , pp. 19-39
    • Gelbard, F.1    Malloy, K.J.2
  • 10
    • 0034246726 scopus 로고    scopus 로고
    • Dephasing times in quantum dots due to elastic LO phonon-carrier collisions
    • Uskov A V, Jauho A-P, Tromborg B, Mørk J and Lang R 2000 Dephasing times in quantum dots due to elastic LO phonon-carrier collisions Phys. Rev. Lett. 85 1516-9
    • (2000) Phys. Rev. Lett. , vol.85 , pp. 1516-1519
    • Uskov, A.V.1    Jauho, A.-P.2    Tromborg, B.3    Mørk, J.4    Lang, R.5
  • 12
    • 2842527053 scopus 로고    scopus 로고
    • Electronic structure of InAs/GaAs self-assembled quantum dots
    • Cusack M A, Briddon P R and Jaros M 1996 Electronic structure of InAs/GaAs self-assembled quantum dots Phys. Rev. B 54 R2300-3
    • (1996) Phys. Rev. B , vol.54
    • Cusack, M.A.1    Briddon, P.R.2    Jaros, M.3
  • 13
    • 0001107041 scopus 로고    scopus 로고
    • Geometry and material parameter dependence of InAs/GaAs quantum dot electronic structure
    • Pryor C 1999 Geometry and material parameter dependence of InAs/GaAs quantum dot electronic structure Phys. Rev. B 60 2869-74
    • (1999) Phys. Rev. B , vol.60 , pp. 2869-2874
    • Pryor, C.1
  • 14
    • 0000778213 scopus 로고    scopus 로고
    • Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations
    • Pryor C 1998 Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations Phys. Rev. B 57 7190-5
    • (1998) Phys. Rev. B , vol.57 , pp. 7190-7195
    • Pryor, C.1
  • 15
    • 0000689765 scopus 로고    scopus 로고
    • InAs quantum dots: Predicted electronic structure of free-standing versus GaAs-embedded structures
    • Williamson A J and Zunger A 1999 InAs quantum dots: predicted electronic structure of free-standing versus GaAs-embedded structures Phys. Rev. B 59 15819-24
    • (1999) Phys. Rev. B , vol.59 , pp. 15819-15824
    • Williamson, A.J.1    Zunger, A.2
  • 16
    • 0035883463 scopus 로고    scopus 로고
    • Electronic structure consequences of In/Ga composition variations in self-assembled InxGa1-xAs/GaAs alloy quantum dots
    • Shumway J et al 2001 Electronic structure consequences of In/Ga composition variations in self-assembled InxGa1-xAs/GaAs alloy quantum dots Phys. Rev. B 64 125302
    • (2001) Phys. Rev. B , vol.64 , pp. 125302
    • Shumway, J.1
  • 17
    • 0036492675 scopus 로고    scopus 로고
    • The effects of adjacent dislocations on the electronic and optical properties of GaN/AlN quantum dots
    • Andreev A D, Downes J R and O'Reilly E P 2002 The effects of adjacent dislocations on the electronic and optical properties of GaN/AlN quantum dots Physica E 13 1094-7
    • (2002) Physica E , vol.13 , pp. 1094-1097
    • Andreev, A.D.1    Downes, J.R.2    O'Reilly, E.P.3
  • 19
    • 0035695928 scopus 로고    scopus 로고
    • Three-dimensional spectral solution of Schrödinger equation
    • Trellakis A and Ravaioli U 2001 Three-dimensional spectral solution of Schrödinger equation VLSI Des. 13 341-7
    • (2001) VLSI Des. , vol.13 , pp. 341-347
    • Trellakis, A.1    Ravaioli, U.2
  • 20
    • 0036058969 scopus 로고    scopus 로고
    • Implicitly restarted Arnoldi methods and subspace iteration
    • Lehoucq R B 2001 Implicitly restarted Arnoldi methods and subspace iteration SIAM J. Matrix Anal. Appl. 23 551-62
    • (2001) SIAM J. Matrix Anal. Appl. , vol.23 , pp. 551-562
    • Lehoucq, R.B.1
  • 21
    • 0035955241 scopus 로고    scopus 로고
    • Energy and coordinate dependent effective mass and confined electron state in quantum dots
    • Li Y M et al 2001 Energy and coordinate dependent effective mass and confined electron state in quantum dots Solid State Commun. 120 79-83
    • (2001) Solid State Commun. , vol.120 , pp. 79-83
    • Li, Y.M.1
  • 22
    • 0035839877 scopus 로고    scopus 로고
    • Line broadening caused by Coulomb carrier-carrier correlations and dynamics of carrier capture and emission in quantum dots
    • Uskov A V, Magnusdottir I, Tromborg B, Mørk J and Lang R 2001 Line broadening caused by Coulomb carrier-carrier correlations and dynamics of carrier capture and emission in quantum dots Appl. Phys. Lett. 79 1679
    • (2001) Appl. Phys. Lett. , vol.79 , pp. 1679
    • Uskov, A.V.1    Magnusdottir, I.2    Tromborg, B.3    Mørk, J.4    Lang, R.5
  • 23
    • 0742276690 scopus 로고    scopus 로고
    • Modeling of phonon- and Coulomb-mediated capture processes in quantum dots
    • PhD Thesis Center for Optical Communication, Technical University of Denmark
    • Magnusdottir I 2003 Modeling of phonon- and Coulomb-mediated capture processes in quantum dots PhD Thesis Center for Optical Communication, Technical University of Denmark
    • (2003)
    • Magnusdottir, I.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.