Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields

Optics Express

Volumn 20, Issue 23, 2012, Pages 25249-25254

  Park, Hyunik ^a   Kim, Byung Jae ^a   Kim, Jihyun ^a  

^a Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS CONDITIONS; DIELECTROPHORETIC FORCES; INGAN/GAN; MULTI QUANTUM WELLS; NONUNIFORM ELECTRIC FIELD; SAPPHIRE SUBSTRATES; THIN FILM LED;

ELECTRIC FIELDS; ELECTROLUMINESCENCE; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; NANORODS; SAPPHIRE; SILICON WAFERS;

LIGHT EMITTING DIODES;

EID: 84869054280     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.025249     Document Type: Article

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