SCOPUS 정보 검색 플랫폼

Volumn 1, Issue 11, 2005, Pages 1052-1057

Top-down fabrication of semiconductor nanowires with alternating structures along their longitudinal and transverse axes

(4) Sun, Yugang a Graff, Rachel A b Strano, Michael S b Rogers, John A a

a University of Illinois at Urbana Champaign (United States)

b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN (United States)

Author keywords

Chemical etching; Nanowires; Photolithography; Photoluminescence; Semiconductors

Indexed keywords

ETCHING; PHOTOLITHOGRAPHY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS;

CHEMICAL ETCHING; GAAS WIRES; MASK MATERIALS; NANOWIRES;

NANOSTRUCTURED MATERIALS;

GALLIUM; GALLIUM ARSENIDE; GOLD; NANOWIRE; ORGANOARSENIC DERIVATIVE; SILICON DIOXIDE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; INSTRUMENTATION; LIGHT; LUMINESCENCE; METHODOLOGY; NANOTECHNOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; SURFACE PLASMON RESONANCE;

ARSENICALS; GALLIUM; GOLD; LIGHT; LUMINESCENCE; MICROSCOPY, ATOMIC FORCE; MICROSCOPY, ELECTRON, SCANNING; NANOTECHNOLOGY; NANOWIRES; SEMICONDUCTORS; SILICON DIOXIDE; SURFACE PLASMON RESONANCE;

EID: 33745439905 PISSN: 16136810 EISSN: 16136829 Source Type: Journal
DOI: 10.1002/smll.200500094 Document Type: Article

Times cited : (21)

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