Fabrication of GaN nanorods by inductively coupled plasma etching via SiO2 nanosphere lithography

Thin Solid Films

Volumn 517, Issue 14, 2009, Pages 3859-3861

  Kim, Byung Jae ^a   Jung, Hyunjung ^a   Kim, Hong Yeol ^a   Bang, Joona ^a   Kim, Jihyun ^a  

^a Korea University   (South Korea)

Author keywords

GaN nanorods; Nanosphere lithography; Plasma etching; SiO2 particles

Indexed keywords

CONTROLLABLE DIAMETERS; ETCHING CONDITIONS; ETCHING MASKS; GAN NANORODS; GAN SUBSTRATES; INDUCTIVELY COUPLED PLASMA ETCHINGS; NANOSPHERE LITHOGRAPHY; SIO2 PARTICLES;

GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; LITHOGRAPHY; NANORODS; NANOSPHERES; PHOTORESISTS; PLASMA ETCHING; SEMICONDUCTING GALLIUM; SILICA;

GALLIUM ALLOYS;

EID: 65449181029     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.144     Document Type: Article

References (16)

1. Yi G.-C., Wang C., and Park W.I. Semicond. Sci. Technol. 20 (2005) S22
2. Qian F., Li Y., Gradecak S., Wang D., Barrelet C.J., and Lieber C.M. Nano Lett. 4 (2004) 1975
3. Sengupta S., and Sasisekharan R. Br. J. Cancer 96 (2007) 1315
4. Li Y., Qian F., Xiang J., and Lieber C.M. Materialstoday 9 (2006) 18
5. Fan H.J., Werner P., and Zhcharias M. Small 2 (2006) 700
6. Kempa K., Kimball B., Rybczynski J., Huang Z.P., Wu P.F., Steeves D., Sennett M., Giersig M., Rao D.V.G.L.N., Carnahan D.L., Wang D.Z., Lao J.Y., Li W.Z., and Ren Z.F. Nano Lett. 3 (2003) 13
7. Wang X., Summers C.J., and Wang Z.L. Nano Lett. 4 (2004) 423
8. Fan H.J., Fuhrmann B., Scholz R., Syrowatka F., Dadgar A., Krost A., and Zacharias M. J. Cryst. Growth 287 (2006) 34
9. Stöber W., Fink A., and Bohn E. J. Colloid Interface Sci. 26 62 (1968)
10. Wang W., Gu B., Liang L., and Hamilton W. J. Phys. Chem. B 207 3400 (2003)
11. Pearton S.J., Ren F., Zhang A.P., and Lee K.P. Mater. Sci. Eng., R Rep. 30 (2000) 55
12. Shul R.J., Wilison C.G., Bridges M.M., Han J., Lee J.W., Pearton S.J., Abernathy C.R., MacKenzie J.D., and Donovan S.M. Solid-State Electron. 42 (1998) 2269
13. Wagner R.S., and Ellis W.C. Appl. Phys. Lett. 4 (1964) 89
14. Morales A.M., and Lieber C.M. Science 279 (1998) 208
15. Huang M.H., Mao S., Feick H., Yan H., Wu Y., Kind H., Weber E., Russo R., and Yang P. Science 292 (2001) 1897
16. Schubert L., Werner P., Zakharov N.D., Gerth G., Kolb F.M., Long L., Gosele U., and Tan T.Y. Appl. Phys. Lett. 84 (2004) 4968