Enhancement of (In,Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon

IEEE Photonics Technology Letters

Volumn 14, Issue 10, 2002, Pages 1400-1402

  Luo, Z S ^a   Cho, Y ^a   Loryuenyong, V ^a   Sands, T ^a   Cheung, N W ^b   Yoo, M C ^c  

^a Lawrence Berkeley National Laboratory   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Oriol Inc   (United States)

Author keywords

(In,Ga)N; Integration; Laser liftoff; Light emitting diode

Indexed keywords

BONDING; ELECTROLUMINESCENCE; EXCIMER LASERS; HETEROJUNCTIONS; INTEGRATION; METALLIZING; SAPPHIRE; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

DOUBLE TRANSFER METHOD; LASER LIFTOFF;

LIGHT EMITTING DIODES;

EID: 0036772748     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.802078     Document Type: Article

References (16)

1. N. Stath, V. Haerle, and J. Wagner, "Optoelectronic device substrates," Materials Today, pp. 20-24, July/Aug. 2001.
2. S. A. Nikishin, N. N. Faleev, V. G. Antipov, S. Francoeur, L. Grave de Peralta, G. A. Seryogin, and H. Temkin, "High quality GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia," Appl. Phys. Lett., vol. 75, pp. 2073-2075, 1999.
3. y masking," Appl. Phys. Lett., vol. 80, pp. 3670-3672, 2002.
4. M. K. Kelly, O. Ambacher, B. Dalheimer, G. Groos, R. Dimitrov, H. Angerer, and M. Stutzmann, "Optical patterning of GaN films," Appl. Phys. Lett., vol. 69, pp. 1749-1751, 1996.
5. W. S. Wong, T. Sands, and N. W. Cheung, "Damage-free separation of GaN thin films from sapphire substrates," Appl. Phys. Lett., vol. 72, pp. 599-601, 1998.
6. W. S. Wong, A. B. Wengrow, Y. Cho, A. Salleo, N. J. Quitoriano, N. W. Cheung, and T. Sands, "Integration of GaN thin films with dissimilar substrate materials by Pd-In metal bonding and laser lift-off," J. Electr. Mater., vol. 28, pp. 1409-1412, 1999.
7. W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, "Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off," Appl. Phys. Lett., vol. 75, pp. 1360-1362, 1999.
8. 1 - xN light emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off," Appl. Phys. Lett., vol. 77, pp.2822-2824, 2000.
9. W. S. Wong, M. Kneissl, P. Mei, D. W. Treat, M. Teepe, and N. M. Johnson, "Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates," Appl. Phys. Lett., vol. 78, pp. 1198-1200, 2001.
10. D. K. Schroder, Semiconductor Materials and Devices Characterization, 2nd ed. New York: Wiley, 1998, ch. 4, p. 200.
11. R. F. Pierret, Semiconductor Device Fundamentals. Reading, MA: Addison-Wesley, 1996, ch. 6.
12. H. Kim, D.-J. Kim, S.-J. Park, and H. Hwang, "Effect of an oxidized Ni/Ai p contact on the performance of GaN/InGaN multiple quantum well light-emitting diodes," J. Appl. Phys., vol. 89, pp. 1506-1508, 2001.
13. J. I. Pankove, Optical Processes in Semiconductors. New York: Dover, 1975, p. 90.
14. P. Perlin, C. Kisielowski, V. Lota, B. A. Weinstein, L. Mattos, N. A. Shapiro, J. Kruger, E. R. Weber, and J. Yang, "InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy," Appl. Phys. Lett., vol. 73, pp. 2778-2780, 1998.
15. T. Wang, T. Sugahara, S. Sakai, and J. Orton, "The influence of the p-n junction induced electric field on the optical properties of InGaN/GaN/AlGaN light emitting diode," Appl. Phys. Lett., vol.74, pp. 1376-1378, 1999.
16. L.-H. Peng, C.-W. Chuang, and L.-H. Lou, "Piezoelectric effects in the optical properties of strained InGaN quantum wells," Appl. Phys. Lett., vol. 74, pp. 795-797, 1999.