FeZnO-based resistive switching devices

Journal of Electronic Materials

Volumn 41, Issue 10, 2012, Pages 2880-2885

  Zhang, Yang ^a   Duan, Ziqing ^a   Li, Rui ^a   Ku, Chieh Jen ^a   Reyes, Pavel ^a   Ashrafi, Almamun ^a   Lu, Yicheng ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

Bilayer; MOCVD; Resistive switching; RRAM; ZnO

Indexed keywords

BI-LAYER; CONDUCTION MECHANISM; FE-DOPED; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MGO; OHMIC BEHAVIOR; OPERATING PARAMETERS; OXYGEN IONS; POOLE-FRENKEL EMISSION; RESISTIVE SWITCHING; RRAM; SET VOLTAGE; SINGLE OXIDES; SWITCHING PERFORMANCE; ZNO;

METALLORGANIC CHEMICAL VAPOR DEPOSITION; TRANSIENTS; ZINC OXIDE;

SWITCHING SYSTEMS;

EID: 84868581601     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-012-2045-2     Document Type: Conference Paper

References (17)

1. R. Waser and M. Aono, Nat. Mater. 6, 833 (2007).
2. W. Chang, Y. Lai, T. Wu, S. Wang, F. Chen, and M. Tsai, Appl. Phys. Lett. 92, 022110 (2008).
3. B.J. Choi, D.S. Jeong, S.K. Kim, C. Rohde, S. Choi, J.H. Oh, H.J. Kim, C.S. Hwang, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke, J. Appl. Phys. 98, 033715 (2005).
4. D. Tondelier, K. Lmimouni, D. Vuillaume, C. Fery, and G. Hass, Appl. Phys. Lett. 85, 5763 (2004).
5. C. Papagianni, Y.B. Nian, Y.Q. Wang, N.J. Wu, and A. Ignatiev, IEEE Non-Volatile Memory Technology Symposium (Orlando, FL, 2004), p. 125.
6. N. Xu, L.F. Liu, X. Sun, X.Y. Liu, D.D. Han, Y. Wang, R.Q. Han, J.F. Kang, and B. Yu, Appl. Phys. Lett. 92, 232112 (2008).
7. K. Zheng, X.W. Sun, J.L. Zhao, Y. Wang, H.Y. Yu, H.V. Demir, and K.L. Teo, IEEE Electron. Dev. Lett. 32, 797 (2011).
8. Y.C. Yang, F. Pan, Q. Liu, M. Liu, and F. Zeng, Nano Lett. 9, 1636 (2009).
9. J. Lee, E.M. Bourim, W. Lee, J. Park, M. Jo, S. Jung, J. Shin, and H. Hwang, Appl. Phys. Lett. 97, 172105 (2010).
10. S. Baik and K. Lim, Appl. Phys. Lett. 97, 072109 (2011).
11. E. Rita, U. Wahl, J.G. Correia, E. Alves, and J.C. Soares, Appl. Phys. Lett. 85, 4899 (2004).
12. P. Wu, G. Saraf, Y. Lu, D.H. Hill, R. Gateau, L. Wielunski, R.A. Bartynski, D.A. Arena, J. Dvorak, A. Moodenbaugh, T. Siegrist, J.A. Raley, and Y.K. Yeo, Appl. Phys. Lett. 89, 012508 (2006).
13. J. Mahoney, C. Lin, W. Brumage, and F. Dorman, J. Chem. Phys. 53, 4286 (1970).
14. A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova, Y.W. Heo, M.P. Ivill, K. Ip, D.P Norton, S.J. Pearton, J. Kelly, R. Rairigh, A.F. Hebard, T. Steiner, J. Vac. Sci. Technol. B 23, 274 (2005).
15. S. Baek, J. Song, and S. Lim, Phys. B 399, 101 (2007).
16. H. Zhou, H. Wang, L. Wu, L. Zhang, K. Kisslinger, Y. Zhu, X. Chen, H. Zhan, and J. Kang, Appl. Phys. Lett. 99, 141917 (2011).
17. C.-J. Ku, Z. Duan, P.I. Reyes, Y. Lu, Y. Xu, C.-L. Hsueh, and E. Garfunkel, Appl. Phys. Lett. 98, 123511 (2011).