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Volumn 309, Issue 5735, 2005, Pages 752-755

Chemistry: Electron localization determines defect formation on ceria substrates

Author keywords

[No Author keywords available]

Indexed keywords

CERIA; ELECTRON LOCALIZATION; HIGH RESOLUTION SCANNING TUNNELING MICROSCOPY; OXIDATION PROCESSES;

EID: 23044467012     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.1111568     Document Type: Article
Times cited : (1250)

References (29)
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    • note
    • Strong correlation effects due to localization are modeled by adding a Hubbard-U term to the energy functional expressed in the pseudo-potential plane-wave framework. Details of the calculation can be found in (23, 24) and in the supporting online materiaL
  • 26
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    • note
    • Statistical evaluation of vacancy occurrences has an error margin of ±0.5% because of some ambiguous defect assignments (see "other" in Fig. 1).
  • 29
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    • note
    • We thank M. Gerunda and P. Facci for providing the STM tips, and S. Baroni, S. de Gironcoli, M. Graziani, and F. Rosei for fruitful discussions and critical reading of the manuscript. S.F. thanks Consorzio Interuniversitario CINECA for computing time. Supported by the International Centre for Theoretical Physics (ICTP) Training and Research in Italian Laboratories (TRIL) program (L.Z.), INSTM, Sincrotrone Trieste ScpA, and Ministero dell'Istruzione, dell'Università e della Ricerca(MIUR) under the programs FIRB 2001 (grant RBNE0155X7), COFINLAB 2001 (grant CLAB013P24), and COFIN 2003.


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