Effects of the oxygen pressure on the crystalline orientation and strains of YSZ thin films prepared by E-beam PVD

Ceramics International

Volumn 37, Issue 6, 2011, Pages 2037-2041

  Kuo, Chin Guo ^a   Huang, Hong Hsin ^b   Yang, Cheng Fu ^c  

^a NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

^c NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

Author keywords

A. Films; B. Interfaces; Yttria stabilized zirconia

Indexed keywords

A. FILMS; B. INTERFACES; CRYSTALLINE ORIENTATIONS; CRYSTALLINE STRUCTURE; FIELD EMISSION SCANNING ELECTRON MICROSCOPES; FLUORITE STRUCTURE; GRAIN SIZE; INTERNAL STRAINS; OXYGEN PRESSURE; PREFERRED ORIENTATIONS; SI(1 0 0); XRD PATTERNS; YSZ THIN FILMS;

CRYSTALLINE MATERIALS; DEPOSITION; FIELD EMISSION; LATTICE CONSTANTS; OXYGEN; PHYSICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SURFACE STRUCTURE; THIN FILMS; X RAY DIFFRACTION; YTTRIA STABILIZED ZIRCONIA; YTTRIUM ALLOYS; ZIRCONIA;

FILM PREPARATION;

EID: 79957444822     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2011.03.051     Document Type: Article

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