Abrupt resistivity decrease and other unexpected phenomena in a doped amorphous ternary metal oxide

Applied Physics Letters

Volumn 97, Issue 9, 2010, Pages

  Sun, Jian ^a   Gong, Hao ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM INCORPORATION; ANNEALING METHODS; GALLIUM OXIDES; INDIUM ZINC OXIDES; INSULATOR METAL TRANSITION; METAL OXIDE SYSTEM; METAL OXIDES; PARTIAL CRYSTALLIZATION; SHARP RESISTANCE; TERNARY OXIDES;

GALLIUM; METALLIC COMPOUNDS; METALS; SEMICONDUCTOR INSULATOR BOUNDARIES; TERNARY SYSTEMS; ZINC; ZINC OXIDE;

METAL INSULATOR TRANSITION;

EID: 77956354289     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3485670     Document Type: Article

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