Improved mobility and conductivity of an Al2O3 incorporated indium zinc oxide system

Journal of Applied Physics

Volumn 110, Issue 2, 2011, Pages

  Sun, Jian ^a   Huang, Yanhua ^a   Gong, Hao ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC RATIO; HIGH MOBILITY; INDIUM ZINC OXIDES; INDUSTRIAL STANDARDS; METAL-SEMICONDUCTOR TRANSITIONS; METALLIC MECHANISMS; QUANTUM CORRECTION;

INDIUM; POSITIVE IONS; SEMICONDUCTING INDIUM; TRANSPORT PROPERTIES; VANADIUM; ZINC; ZINC OXIDE;

ALUMINUM;

EID: 79961099887     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3605547     Document Type: Article

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