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Volumn 112, Issue 8, 2012, Pages

Transient photoresponse and incident power dependence of high-efficiency germanium quantum dot photodetectors

(11) Liu, Pei a Cosentino, S b,c Le, Son T a Lee, S b Paine, D b Zaslavsky, A b Pacifici, D b Mirabella, S c Miritello, M c Crupi, I c Terrasi, A c

a BROWN UNIVERSITY (United States)

b Brown University (United States)

c UNIVERSITY OF CATANIA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

INCIDENT POWER; INTERNAL QUANTUM EFFICIENCY; OPTICAL POWER; PHOTOCONDUCTION; PHOTORESPONSES; QUANTUM-DOT PHOTODETECTORS; REVERSE BIAS; SERIES RESISTANCES; SYSTEMATIC STUDY; TIME-RESOLVED; TRANSIENT CURRENT;

ELECTRIC RESISTANCE; PHOTODETECTORS; PHOTONS; SEMICONDUCTOR QUANTUM DOTS;

GERMANIUM;

EID: 84868348836 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4759252 Document Type: Article

Times cited : (45)

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