MBE growth of ultra small coherent Ge quantum dots in silicon for applications in nanoelectronics

Journal of Physics and Chemistry of Solids

Volumn 69, Issue 2-3, 2008, Pages 669-672

  Pchelyakov, O P ^a   Nikiforov, A I ^a   Olshanetsky, B Z ^a   Teys, S A ^a   Yakimov, A I ^a   Chikichev, S I ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; MICROWAVE DEVICES; MOLECULAR BEAM EPITAXY; NANOCLUSTERS; NANOELECTRONICS; SCANNING TUNNELING MICROSCOPY; THERMODYNAMICS;

MOLECULAR PROCESSES; MORPHOLOGICAL TRANSITIONS; QUANTUM EFFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 38749090161     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2007.07.056     Document Type: Article

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