Record low contact resistivity to n-type Ge for CMOS and memory applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Martens, K ^b,c   Firrincieli, A ^b   Rooyackers, R ^a   Vincent, B ^a   Loo, R ^a   Locorotondo, S ^a   Rosseel, E ^a   Vandeweyer, T ^a   Hellings, G ^a   De Jaeger, B ^a   Meuris, M ^a   Favia, P ^a   Bender, H ^a   Douhard, B ^a   Delmotte, J ^a   Vandervorst, W ^b   Simoen, E ^a   Jurczak, G ^a   Wouters, D ^b   Kittl, J A ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c RESEARCH FOUNDATION FLANDERS FWO   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTIVITIES; FERMI LEVEL PINNING; HIGH POTENTIAL; LASER ANNEALING; MEMORY APPLICATIONS; N-TYPE GE; NOVEL SOLUTIONS; PASSIVATION LAYER;

DOPING (ADDITIVES); ELECTRON DEVICES; NICKEL COMPOUNDS; PASSIVATION;

GERMANIUM;

EID: 79951833691     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703387     Document Type: Conference Paper

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