Bulk electronic structure of the dilute magnetic semiconductor Ga 1-x Mn x As through hard X-ray angle-resolved photoemission

Nature Materials

Volumn 11, Issue 11, 2012, Pages 957-962

  Gray, A X ^a,b,c   Minar J ^d   Ueda, S ^e   Stone, P R ^b,f   Yamashita, Y ^e   Fujii, J ^g   Braun, J ^d   Plucinski, L ^h   Schneider, C M ^h   Panaccione, G ^g   Ebert, H ^d   Dubon, O D ^b,f   Kobayashi, K ^e   Fadley, C S ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^d UNIVERSITY OF MUNICH   (Germany)

^e NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^f University of California Berkeley   (United States)

^g LABORATORIO TASC   (Italy)

^h FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DILUTED MAGNETIC SEMICONDUCTORS; ELECTRONIC STRUCTURE; FERROMAGNETISM; GALLIUM ARSENIDE; MAGNETIC SEMICONDUCTORS; MAGNETISM; PHOTOEMISSION; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GALLIUM;

ANGLE-RESOLVED PHOTOEMISSION; BULK ELECTRONIC STRUCTURES; COHERENT POTENTIAL APPROXIMATION; DILUTE MAGNETIC SEMICONDUCTORS; DIRECT OBSERVATIONS; DOUBLE EXCHANGE; MATRIX ELEMENTS; VALENCE-BAND MAXIMUMS;

MANGANESE;

EID: 84867860177     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat3450     Document Type: Article

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