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Volumn 105, Issue 23, 2010, Pages

Band gap and electronic structure of an epitaxial, semiconducting Cr 0.80Al0.20 thin film

(9) Boekelheide, Z a,b Gray, A X b,c Papp, C b,d Balke, B b,e Stewart, D A f Ueda, S g Kobayashi, K g Hellman, F a,b Fadley, C S b,c

a UNIVERSITY OF CALIFORNIA (United States)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

c UNIVERSITY OF CALIFORNIA (United States)

d UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

e JOHANNES GUTENBERG UNIVERSITY (Germany)

f Department of Theoretical and Applied Mechanics and the Cornell Nanofabrication Facility (United States)

g NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; FERMI ENERGY; HARD X-RAY PHOTOEMISSION SPECTROSCOPY; HOLE BANDS; PHOTOEMISSION MEASUREMENTS; SEMICONDUCTING BEHAVIOR; VALENCE BAND EDGES;

ALUMINUM; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; PHOTOEMISSION; THIN FILMS; VALENCE BANDS;

DENSITY FUNCTIONAL THEORY;

EID: 78649810779 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.105.236404 Document Type: Article

Times cited : (12)

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