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Physical Review Letters

Volumn 97, Issue 8, 2006, Pages

Impurity band conduction in a high temperature ferromagnetic semiconductor

(10) Burch, K S a,d Shrekenhamer, D B a Singley, E J a,e Stephens, J b Sheu, B L c Kawakami, R K b,f Schiffer, P c Samarth, N c Awschalom, D D b Basov, D N a

a UNIVERSITY OF CALIFORNIA (United States)

b UNIVERSITY OF CALIFORNIA (United States)

c PENNSYLVANIA STATE UNIVERSITY (United States)

d CENTER FOR INTEGRATED NANOTECHNOLOGIES (United States)

e CALIFORNIA STATE UNIVERSITY (United States)

f UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; FERROMAGNETIC MATERIALS; MANGANESE; METAL INSULATOR BOUNDARIES; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS;

FERMI ENERGY (EF); METAL TO INSULATOR TRANSITION; MN-INDUCED IMPURITY BAND (IB); NONMAGNETIC IMPURITIES;

BAND STRUCTURE;

EID: 33747687135 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.97.087208 Document Type: Article

Times cited : (170)

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