Stoichiometric Low Temperature (SLT) GaAs and AIGaAs grown by molecular beam epitaxy

Microelectronics Journal

Volumn 27, Issue 4-5, 1996, Pages 393-409

  Missous, M ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRIC PROPERTIES; LOW TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; STOICHIOMETRY;

ELECTROOPTICAL PROPERTIES; STOICHIOMETRIC LOW TEMPERATURE SEMICONDUCTORS;

EPITAXIAL GROWTH;

EID: 0030189469     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2692(95)00064-x     Document Type: Article

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