High-quality GaMnAs films grown with arsenic dimers

Journal of Crystal Growth

Volumn 247, Issue 1-2, 2003, Pages 42-48

  Campion, R P ^a   Edmonds, K W ^a   Zhao, L X ^a   Wang, K Y ^a   Foxon, C Thomas ^a   Gallagher, B L ^a   Staddon, C R ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

B1. GaMnAs; B2. Semiconducting materials; B3. Spintronic devices

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMERS; FERROMAGNETIC MATERIALS; HALL EFFECT; MAGNETIC PROPERTIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS;

SPINTRONIC DEVICES;

SEMICONDUCTING FILMS;

EID: 0037211035     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01939-5     Document Type: Article

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