Analytical model of surface depletion in GaAs nanowires

Journal of Applied Physics

Volumn 112, Issue 6, 2012, Pages

  Chia, Andrew C E ^a   Lapierre, Ray R ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE NEUTRALITY LEVEL; COMPREHENSIVE MODEL; DOPING DENSITIES; FERMI-DIRAC STATISTICS; FULLY DEPLETED; GAAS; INTERFACE STATE DENSITY; KEY PARAMETERS; MAJORITY CARRIERS; PARTIALLY DEPLETED; PLANAR FILMS; POISSON'S EQUATION; SURFACE DEPLETION;

INTERFACE STATES; INTERFACES (MATERIALS); POISSON EQUATION; SEMICONDUCTOR DOPING;

NANOWIRES;

EID: 84867064859     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4752873     Document Type: Article

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