Electrical transport and optical model of GaAs-AlInP core-shell nanowires

Journal of Applied Physics

Volumn 111, Issue 9, 2012, Pages

  Chia, A C E ^a   Tirado, M ^b   Li, Y ^c   Zhao, S ^c   Mi, Z ^c   Comedi, D ^b,d   Lapierre, R R ^a  

^a MCMASTER UNIVERSITY   (Canada)

^b UNIVERSIDAD NACIONAL DE TUCUMÁN   (Argentina)

^c MCGILL UNIVERSITY   (Canada)

^d Universidad Nacional de Río Cuarto Consejo Nacional de Investigaciones Científicas y Técnicas   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

BULK RECOMBINATION; CHARGE TRAP; CORE-SHELL; CORE-SHELL NANOWIRES; CURRENT-VOLTAGE MEASUREMENTS; DETAILED MODELS; ELECTRICAL TRANSPORT; GAAS; OPTICAL MODELS; PASSIVATION METHODS; PHOTOLUMINESCENCE INTENSITIES; SURFACE RECOMBINATION VELOCITIES; SURFACE RECOMBINATIONS; VAPOR-LIQUID-SOLID METHODS;

GALLIUM ARSENIDE; GAS SOURCE MOLECULAR BEAM EPITAXY; PASSIVATION; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY; TRANSPORT PROPERTIES; VAPORS;

NANOWIRES;

EID: 84864251799     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4716011     Document Type: Article

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