Unpinned interface Fermi-level in Schottky contacts to n-GaAs capped with low-temperature-grown GaAs; experiments and modeling using defect state distributions

Journal of Applied Physics

Volumn 93, Issue 5, 2003, Pages 2772-2779

  Lodha, Saurabh ^a   Janes, David B ^a   Chen, Nien Po ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC CONTACTS; FERMI LEVEL; INTERFACES (MATERIALS); POISSON EQUATION;

SCHOTTKY CONTACTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037349798     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1536734     Document Type: Article

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