SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 521, Issue , 2012, Pages 212-215

Stability of a-InGaZnO thin film transistor under pulsed gate bias stress

(6) Seo, Seung Bum a Jeon, Jae Hong a Park, Han Sung a Choe, Hee Hwan a Seo, Jong Hyun a Park, Sang Hee Ko b

a Hankuk Aviation University (South Korea)

b Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

a IGZO; Stability; TFT

Indexed keywords

A-IGZO; AMORPHOUS INGAZNO; DC BIAS; DEGRADATION MECHANISM; GATE-BIAS STRESS; LIGHT ILLUMINATION; NEGATIVE GATE VOLTAGES; SQUARE WAVES; TFT; TIME DURATION;

CONVERGENCE OF NUMERICAL METHODS; DEGRADATION; THIN FILM TRANSISTORS;

BIAS VOLTAGE;

EID: 84867046325 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.11.075 Document Type: Conference Paper

Times cited : (3)

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