Improvement of crystal quality of GaInNAs films grown by atomic hydrogen-assisted RF-MBE

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 553-557

  Shimizu, Yukiko ^a   Kobayashi, Naoto ^a   Uedono, Akira ^a   Okada, Yoshitaka ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

A1. Defects; A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B2. Semiconducting ternary compounds

Indexed keywords

CRYSTALS; DEFECTS; ENERGY GAP; HYDROGEN; INDIUM; IRRADIATION; MOLECULAR BEAM EPITAXY; QUALITY CONTROL; SODIUM; TERNARY SYSTEMS;

BAND GAP ENERGY; SEMICONDUCTING III-V MATERIALS; SEMICONDUCTING TERNARY COMPOUNDS; VACANCY-TYPE DEFECTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 18444375905     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.114     Document Type: Conference Paper

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