Characterization of channel-diameter-dependent low-frequency noise in silicon nanowire field-effect transistors

IEEE Electron Device Letters

Volumn 33, Issue 10, 2012, Pages 1348-1350

  Lee, Sang Hyun ^a   Baek, Chang Ki ^a   Park, Sooyoung ^a   Kim, Dong Won ^b   Sohn, Dong Kyun ^b   Lee, Jeong Soo ^a   Kim, Dae M ^a   Jeong, Yoon Ha ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Channel diameter; low frequency noise; silicon nanowire field effect transistor (SNWFET); volume inversion

Indexed keywords

CHANNEL DIAMETERS; CORRELATED MOBILITY FLUCTUATIONS; INVERSION CHARGE; LOW-FREQUENCY NOISE; NOISE BEHAVIOR; NOISE DATA; OXIDE TRAP DENSITY; SILICON NANOWIRE FIELD-EFFECT TRANSISTORS; SPATIAL CHARGE DISTRIBUTION; VOLUME INVERSION;

ELECTRON DEVICES;

ELECTRONICS ENGINEERING;

EID: 84866910581     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2209625     Document Type: Article

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