Characterization of the annealing behavior for copper-filled TSVs

Proceedings - Electronic Components and Technology Conference

Volumn , Issue , 2012, Pages 619-624

  Saettler, P ^a   Boettcher, M ^b   Wolter, K J ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b Fraunhofer Institute Reliability and Microintegration   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING BEHAVIOR; ANNEALING CONDITION; ANNEALING PROCEDURES; ANNEALING PROCESS; COPPER MICROSTRUCTURES; CROSS SECTION; DWELL PROCESS; ELECTRON BACK SCATTER DIFFRACTION; MEASUREMENT DATA; MEASUREMENT RESULTS; PROCESSING STEPS; STRUCTURAL CHANGE; TEST SAMPLES; THROUGH SILICON VIAS; WARPAGES;

CHARACTERIZATION; COPPER; EXPERIMENTS; GRAIN GROWTH; OPTIMIZATION;

ANNEALING;

EID: 84866884589     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2012.6248895     Document Type: Conference Paper

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