Orthotropic stress field induced by TSV and its impact on device performance

2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011

Volumn , Issue , 2011, Pages

  Hsieh, C C ^a   Teng, H A ^a   Jeng, S P ^a   Jan, S B ^a   Chen, M F ^a   Chang, J H ^a   Chang, C H ^a   Yang, K F ^a   Lin, Y C ^a   Wu, T J ^a   Chiou, W C ^a   Hou, S Y ^a   Yu, Doug C H ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN RULES; DEVICE PERFORMANCE; ELASTIC BEHAVIOR; ELECTRICAL DATA; FEM MODELS; MEASURED DATA; SHIFT PATTERNS; SILICON SUBSTRATES; STRESS FIELD; SYSTEM INTEGRATION;

METALLIZING;

STRESSES;

EID: 80052041017     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2011.5940276     Document Type: Conference Paper

References (4)

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3. T. A. Parthasarathy et. al,. Materials Science Forum Vols, 595-598 (2008) pp. 823-832. 2008
4. T. A. Parthasarathy et. al,. J. Am. Ceram. Soc,. 92 [5] pp. 1079-1086. 2009