Transition from 2-D semiconductor to 1-D metal state and electron density distribution in nanolayered MoX 2 (X = S, Se, Te)

Journal of Physical Chemistry C

Volumn 116, Issue 38, 2012, Pages 20651-20655

  Gabuda, Svyatoslav P ^a   Kozlova, Svetlana G ^a   Ryzhikov, Maxim R ^a   Fedorov, Vladimir E ^a  

^a NIKOLAEV INSTITUTE OF INORGANIC CHEMISTRY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DICHALCOGENIDES; ELECTRICITY-CONSUMPTION; MECHANICAL FLEXIBILITY; METAL STATE; PHYSICAL LIMITS; TOPOLOGICAL ANALYSIS OF ELECTRON DENSITY; ZIGZAG CHAINS;

ELECTRONIC DENSITY OF STATES; SILICON COMPOUNDS;

MOLYBDENUM;

EID: 84866867128     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp3080767     Document Type: Article

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