Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors

Journal of the Korean Physical Society

Volumn 53, Issue 5 PART 2, 2008, Pages 3043-3046

  Wei, Z P ^a,b,c   Yao, B ^a   Li, Y F ^a   Shen, D Z ^a   Lu, Y M ^a   Zhang, Z Z ^a   Li, B H ^a   Zheng, C J ^a   Wang, X H ^a   Zhang, J Y ^a   Zhao, D X ^a   Fan, X W ^a   Tang, Z K ^d  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^d HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

N doping; P MBE; ZnMgO ZnO p n junction

Indexed keywords

EID: 57349175198     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.53.3043     Document Type: Conference Paper

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