Structural, electrical and optical properties of p-type transparent conducting SnO2:Al film derived from thermal diffusion of Al/SnO 2/Al multilayer thin films

Acta Materialia

Volumn 58, Issue 19, 2010, Pages 6243-6248

  Zhao, J ^a   Zhao, X J ^a   Ni, J M ^a   Tao, H Z ^a  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Annealing; Multilayer thin films; p Type SnO2:Al film; Sputtering

Indexed keywords

AL FILMS; ANNEALING PARAMETERS; CONDUCTING FILMS; DEPOSITED FILMS; DIRECT CURRENT; ELECTRICAL AND OPTICAL PROPERTIES; LOW RESISTIVITY; MULTI-LAYER THIN FILM; MULTILAYER THIN FILMS; OPTICAL PERFORMANCE; P-TYPE; POLYCRYSTALLINE; QUARTZ SUBSTRATE; RADIO-FREQUENCY-MAGNETRON SPUTTERING; TETRAGONAL RUTILE STRUCTURE;

ALUMINUM; ANNEALING; CONDUCTIVE FILMS; ELECTRIC PROPERTIES; FILM PREPARATION; HOLE CONCENTRATION; METALLIC FILMS; MULTILAYERS; OPTICAL PROPERTIES; OXIDE MINERALS; QUARTZ; THERMAL DIFFUSION IN LIQUIDS; VAPOR DEPOSITION; X RAY DIFFRACTION;

MULTILAYER FILMS;

EID: 77957115271     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2010.07.042     Document Type: Article

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