Abnormal dopant distribution in POCl3-diffused N+ emitter of textured silicon solar cells

IEEE Electron Device Letters

Volumn 32, Issue 3, 2011, Pages 351-353

  Ok, Young Woo ^a   Rohatgi, Ajeet ^a   Kil, Yeon Ho ^b   Park, Sung Eun ^c   Kim, Dong Hwan ^c   Lee, Joon Sung ^d   Choi, Chel Jong ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Chonbuk National University   (South Korea)

^c Korea University   (South Korea)

^d Hyundai Heavy Industries   (South Korea)

Author keywords

Junction; selective chemical etching; Si interstitial; solar cells; transmission electron microscopy (TEM)

Indexed keywords

CHEMICAL ETCHING; DOPANT DISTRIBUTION; INHOMOGENEOUS DISTRIBUTION; INTERSTITIALS; JUNCTION; SELECTIVE CHEMICAL ETCHING; SI INTERSTITIAL; SIMULATION RESULT; TEM; TEXTURED SI;

ETCHING; PHOSPHORUS; SILICON SOLAR CELLS; SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY;

SILICON;

EID: 79951941736     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2098840     Document Type: Article

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