Reverse saturation current density imaging of highly doped regions in silicon employing photoluminescence measurements

IEEE Journal of Photovoltaics

Volumn 2, Issue 4, 2012, Pages 473-478

  Müller, Jens ^a   Bothe, Karsten ^a   Herlufsen, Sandra ^a   Ohrdes, Tobias ^a   Brendel, Rolf ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

Highly doped regions; imaging; photoluminescence (PL); silicon (Si) solar cells

Indexed keywords

CALIBRATION FUNCTIONS; FLOAT ZONE SILICON; HIGHLY DOPED REGIONS; ILLUMINATION INTENSITY; LONG WAVELENGTH; MEASUREMENT SETUP; METAL CONTACTS; PHOSPHOROUS DIFFUSION; PHOTOLUMINESCENCE MEASUREMENTS; PL EMISSION; REVERSE-SATURATION CURRENTS; SHORT-PASS FILTER; SILVER PASTES; TEXTURED SURFACE;

CAMERAS; IMAGING TECHNIQUES; METALLIZING; PHOSPHORUS; PHOTOLUMINESCENCE; SILICON;

SILICON WAFERS;

EID: 84866728821     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2201916     Document Type: Article

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