Quantum efficiency analysis of thin-layer silicon solar cells with back surface fields and optical confinement

IEEE Transactions on Electron Devices

Volumn 43, Issue 7, 1996, Pages 1104-1113

  Brendel, R ^a   Hirsch, M ^a   Plieninger, K ^a   Werner, I I ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC SPACE CHARGE; EPITAXIAL GROWTH; LIGHT ABSORPTION; MATHEMATICAL MODELS; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; SURFACES; TEXTURES; THREE DIMENSIONAL;

FREE CARRIERS; LIGHT TRAPPING EFFECTS; OPTICAL CONFINEMENT; OPTICAL LOSSES; QUANTUM EFFICIENCY MEASUREMENT; SILICON SUBSTRATE INTERFACE;

SILICON SOLAR CELLS;

EID: 0030195614     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.502422     Document Type: Article

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